3D Interconnect Module Layout for Shorter Die-Stack Bonding
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Solution Overview
Problem
As semiconductor die stacks increase in height to enhance capacity and performance, they face challenges with electrical connections due to wire sweep, signal delay, and crosstalk issues, particularly with long wire bonds that lead to desynchronization and increased costs with the use of costly materials like gold.
Innovation Solution
The implementation of a three-dimensional interconnect module with multiple tiers and redistribution layers that reduce wire sweep by shortening signal travel distance and insulating signal lines, using a combination of wire bonds and redistribution layers to connect dies efficiently, allowing for more compact packaging and reduced crosstalk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of die stacks is increased to enhance capacity and performance, then the storage capacity and processing power are improved, but wire sweep issues and electrical connection reliability deteriorate
Solution Approach 1:
The patent transitions from planar (2D) wire bonding to three-dimensional (3D) bonding by introducing vertical interconnect modules that extend connections in the Z-direction. This allows electrical connections to bypass the problematic lateral wire sweep path and instead travel vertically through the stack, eliminating wire sweep issues while maintaining connection reliability in high-capacity multi-die stacks.
2Reliability
If long wire bonds are used to connect upper dies to the package substrate, then electrical connectivity is maintained, but signal delay and crosstalk increase
Solution Approach 1:
The patent segments the electrical connection path into multiple shorter vertical segments through the introduction of intermediate bonding tiers. Instead of one long wire bond from the upper die directly to the substrate, the signal travels through a series of shorter vertical bonds via intermediate tiers, reducing the length of each individual bond and thereby minimizing signal delay and crosstalk while maintaining overall connectivity.
3Quantity of substance
If the number of wire bonds is increased to accommodate more dies in a stack, then storage capacity is improved, but wire sweep and manufacturing complexity worsen
Solution Approach 1:
The patent resolves the complexity issue by moving wire bonds from the lateral plane to the vertical dimension. The three-dimensional bonding structure organizes multiple wire bonds in the vertical Z-direction rather than packing them laterally, which eliminates wire sweep problems and simplifies the manufacturing process while supporting higher storage capacity through increased die stacking.
4Reliability
If costly materials like gold are used in wire bonds to reduce resistance, then electrical conductivity is improved, but manufacturing cost increases
Solution Approach 1:
The patent replaces the mechanical wire bonding system with a vertical interconnect module system that uses redistribution layers and direct vertical bonding. This substitution eliminates the need for extensive lateral wire bonds made of expensive gold, as the vertical connection path through the interconnect module provides sufficient electrical conductivity using more cost-effective materials and structures.
Data Source
AI summary
Semiconductor devices having three-dimensional bonding schemes and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device includes a package substrate, a stack of semiconductor dies carried by the package substrate, and an interconnect module carried by the package substrate adjacent the stack of semiconductor dies. The stack of semiconductor dies can include a first die carried by the package substrate and a second die carried by the first die. Meanwhile, the interconnect module can include at least a first tier and a second tier. The first tier can be carried by and electrically coupled to the package substrate, and the second tier can be carried by and electrically coupled to the first tier. In turn, the second die can be electrically coupled to the second tier.