Solid-State Devices TRIZ Cases

Insulating-layer openings near micro light-emitting element ends improve light extraction while preserving electrical isolation in dense display pixels.

Low- and high-workfunction devices are integrated on one die to cut propagation delay and preserve data fidelity between computing and storage.

Lateral light emission through resin sidewalls spreads LED output more evenly, cutting backlight thickness, spot defects, and power use.

A step-adjusting layer and intermediary substrate help batch-mount micro LEDs reliably while screening out failed emitters.

Selective bank power switching by cell identifiers cuts current and heat in stacked semiconductor memory while preserving usable capacity.

Conductive shielding regions on backside image sensors intercept electrostatic fields, preventing arcing damage and improving manufacturing yield.

By moving ESD protection outside I/O and power cells and widening its layout, chip area growth is suppressed across multiple power domains.

Pre-fabricated light-blocking structures protect transferred micro LEDs from lithography damage, improving bonding reliability and production yield.

By placing source and drain electrodes under the TFT active layer with the light-blocking layer, this case cuts mask steps from 9 to 7.

Three aspheric lens elements on stacked substrates expand chip-cube camera field of view while keeping low distortion and a compact form.

A dummy MTJ and metal interconnect ring shields MRAM arrays from electromagnetic interference, improving sensitivity and power efficiency.

Backside interconnects formed by epitaxy, implantation, and drive-in cut capacitance and power while supporting mixed high-performance and low-power chips.

Side-surface connection lines link top signal lines to bottom pads, shrinking OLED bezel area without bending the TFT substrate.

An impurity-free source layer blocks dopant diffusion in stacked memory channels, improving electrical characteristics, reliability, and yield.

An optical pattern beside each light-emitting element under a shared lens reduces brightness differences and visual mura in compact modules.

Dual-lens subpixels switch between wide and narrow viewing angles while suppressing high-angle light leaks that could distract drivers.

An inward-overlapping inorganic layer supplies protons to improve electron injection and transport in quantum dot display pixels, boosting light efficiency.

A trench bonding layer strengthens reflective-layer attachment to the planarization layer while allowing broader material selection in displays.

Angled digit lines, shield lines, and GAA transistors improve memory density, leakage control, and die-size use in CoA memory arrays.

Extended gate regions and merged gates create larger landing areas for vertical transistor contacts while easing topography and lithography.

An aspherical reflective recess redirects LED surface light to boost rear-view luminance and uniformity while reducing hot spots and glare.

Reflective resin layers with dispersed particles redirect lateral LED light forward, improving extraction and reducing bright lines between display modules.

A hydrophobic coating layer confines light-emitting ink between display electrodes, improving placement accuracy, pixel yield, and reliability.

A stacked ASIC and programmable die NIC resolves the flexibility-versus-performance tradeoff while meeting power and form factor limits.

A non-uniform intermediate layer improves OLED encapsulation against moisture and impurities while keeping the display thin and manufacturable.

Extended transparent electrodes and auxiliary sub-pixels preserve transmission area while maintaining OLED emission aperture for clearer background viewing.

A sloped insulating layer and asymmetric semiconductor geometry improve micro-LED light extraction while reducing defect density.

Small LED chips are paired with larger packages and enlarged electrodes to raise current density while improving mounting yield and replacement.

A sloped light-shielding metal edge guides light to an in-display sensor, preserving display quality while improving detection accuracy.

A via and redundant wiring layout in adjacent ToF pixels cuts parasitic capacitance, reducing cyclic error and drive current dispersion.

A convex lens layer increases displayed pixel density without shrinking pixel-unit spacing, preserving room for driving circuits.

A trench-bridged electrode and insulating layer connect adjacent LED units while preserving uniform current injection and light extraction.

Inkjet-printed conductive links join adjacent display panels for narrow seams while simplifying mini-LED and micro-LED splicing.

A recessed chip sidewall and stress relief region reduce laser dicing damage, protecting device integrity and separation reliability.

A two-layer gate and scan-line layout cuts scan-line load in large LCD panels, improving pixel charging while simplifying fabrication.

Patterned substrate epitaxy forms multi-color LED units on both sides, avoiding phosphors or quantum dots to improve yield and service life.

Blocking walls and high-transmittance packaging improve light paths and reduce optical interference in non-invasive glucose sensing.

An inorganic encapsulation layer fills the bank opening to block oxygen and moisture while planarizing thin display structures.

An interface control layer blocks dielectric reduction and leakage current while keeping low EOT and high capacitance in high-k semiconductor stacks.

A two-layer light transmitting structure and curved reflector improve LED brightness uniformity without larger fixtures or lower luminous efficiency.

Dual-stage filtering removes magnetic and non-magnetic debris before LED assembly, reducing shorts, dark pixels, and brightness loss.

Predefined dummy boundary cells standardize IC cell edges, easing layout verification, saving space, and meeting spacing rules.

Sub-pixel shielding on opposite substrates directs front and back light paths to cut crosstalk, raise transparency, and lower power use.

Alternating dielectric layers with different lattice and dielectric constants raise MIM capacitance while suppressing leakage current.

A transfer pad expands pixel electrode contact to the TFT drain, lowering resistance and improving electron transfer for better display quality.

Selective aluminum oxide over the channel raises channel resistance while keeping source and drain resistance low to preserve TFT ON current.

A metal layer over the link line between non-active-area pads helps reduce defects and improve display panel reliability.

Integrated signal measurement in a welded semiconductor pressure sheet cuts custom structures, reducing size while improving versatility.

Receiving elements hold LED chips securely yet release them at a defined minimum force, reducing tilt, damage, and transfer defects.

A three-layer oxide, oxynitride, and nitride stack blocks moisture and hydrogen ingress to stabilize channel length and improve display transistor reliability.