Memory Channel Source Stack With Impurity Diffusion Barrier

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Solution Overview

Problem

As the integration density of semiconductor devices increases, they suffer from deteriorated electrical characteristics and low production yield, necessitating improvements in electrical and reliability characteristics.

Innovation Solution

The semiconductor device incorporates an impurity-free second source layer between the first and third source layers, which prevents excessive diffusion of impurities and enhances the reliability and electrical characteristics of the device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If integration density of semiconductor devices is increased, then device functionality and capacity are improved, but electrical characteristics deteriorate and production yield decreases

Engineering Contradiction:

Improveintegration densityVSAvoidelectrical characteristics

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The source layer is divided into multiple segments (first source layer, second source layer, third source layer) with different impurity concentrations. This segmentation allows each layer to serve specific functions: the first and third layers provide necessary impurities for electrical conduction, while the impurity-free second layer prevents excessive diffusion and maintains electrical characteristics, thus resolving the contradiction between integration density and electrical performance

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the source structure are assigned different impurity concentrations to optimize local electrical characteristics. The first source layer has impurities of a first conductivity type, the second source layer is impurity-free, and the third source layer has impurities of a second conductivity type. This local differentiation enables precise control of electrical properties in high-density integration while preventing harmful impurity diffusion

Inventive Principle:

Principle #3Local quality

2Quantity of substance

If integration density of semiconductor devices is increased, then device functionality is improved, but production yield decreases

Engineering Contradiction:

Improveintegration densityVSAvoidproduction yield

Core Design Contradiction:

Quantity of substanceVSProductivity

Solution Approach 1:

Dividing the source layer into multiple impurity-controlled segments enables better manufacturing control and consistency. The impurity-free second source layer acts as a diffusion barrier that can be precisely controlled during fabrication, reducing variability and improving production yield while maintaining high integration density

Inventive Principle:

Principle #1Segmentation

3Reliability

If impurities diffuse excessively in source layers, then electrical characteristics deteriorate, but device operation is affected

Engineering Contradiction:

Improveelectrical characteristicsVSAvoidimpurity diffusion

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The impurity-free second source layer acts as an intermediary barrier between the first and third source layers. This intermediate layer prevents excessive diffusion of impurities from the doped regions while still allowing necessary electrical conduction pathways, thus resolving the contradiction between maintaining electrical characteristics and preventing impurity diffusion

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent converts the potentially harmful effect of impurity diffusion into a beneficial structure by using controlled impurity distribution. The impurity-free second layer strategically positioned between doped regions transforms the diffusion process into a controlled mechanism that defines sharp junctions and improves device performance

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The implementation of the impurity-free second source layer improves the reliability and electrical characteristics of semiconductor devices, addressing issues related to integration density and production yield.

Implementation Method 1

the second source layer may prevent impurities, which are included in first and third source layers, from being excessively diffused

Methodology Applied

Scientific EffectDiffusion: Diffusion

Data Source

PatentUS20250133738A1Semiconductor device and electronic system including the same

Publication Date: 2025.04.24 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes a gate stack with alternating conductive patterns and insulating patterns. The device also includes a first memory channel structure including a first channel layer enclosed by the gate stack and a first memory layer enclosing the first channel layer. The device also includes a source structure electrically connected to the first channel layer. The source structure includes several source layers stacked atop one another. The first channel layer is in physical contact with the second source layer but apart from the other source layers. The first source layer contains impurities of a first conductivity type. The second source layer is formed of an impurity-free material. The third source layer contains impurities of a second conductivity type different from the first conductivity type.