Pixel Electrode Contact Layout for Lower TFT Drain Resistance

The patent introduces a transfer pad as an intermediary conductive layer between the pixel electrode and the drain. This transfer pad serves as a mediator that facilitates electron transfer by providing an extended contact area, thereby improving electrical connection without directly modifying the fundamental TFT structure excessively.

The transfer pad extends the contact area in the planar dimension (horizontal plane) rather than increasing vertical stacking. By expanding the interaction area between pixel electrode and drain in the lateral direction, the patent improves electron transfer pathways without significantly increasing device height or vertical complexity.

The transfer pad is formed as a pre-established conductive structure before the pixel electrode is deposited. By preparing the transfer pad in advance with appropriate dimensions and position, the patent creates a robust foundation that tolerates subsequent alignment variations during pixel electrode formation, thereby reducing resistance without requiring extreme precision in later steps.

The patent optimizes the dimensional parameters of the transfer pad (such as its width, length, and thickness) to achieve an optimal balance between contact area and alignment tolerance. By carefully selecting these parameters, the transfer pad provides sufficient contact area to reduce resistance while maintaining reasonable manufacturing tolerances.