Memory Bank Power Control for Stacked Semiconductor Capacity

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Solution Overview

Problem

High-capacity memory devices with stacked chip packaging structures face challenges with high current and power consumption, leading to increased heating and reduced operational capacity.

Innovation Solution

A semiconductor memory device with a power control circuit that applies specific power voltages or ground voltages to power terminals based on identifiers assigned to memory cells, optimizing power usage and reducing current consumption in non-used circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a plurality of memory chips are stacked to form a multi-chip package memory to increase capacity, then the integration degree and capacity are improved, but the current consumption, power consumption, and heating value increase

Engineering Contradiction:
Improvememory capacityVSAvoidpower consumption
Core Design Contradiction:
Quantity of substanceVSUse of energy by moving object

Solution Approach 1:

The memory device is divided into multiple independently controllable banks, where each bank can be activated or deactivated based on access requirements. This segmentation allows the system to power down unused banks, reducing overall power consumption while maintaining high capacity through the stacked multi-chip structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements dynamic power control by selectively enabling or disabling power supply to different banks based on their usage status. This dynamic adjustment of power states allows the system to optimize between capacity utilization and power consumption in real-time, preventing unnecessary power drain in inactive memory regions.

Inventive Principle:
Principle #15Dynamics

2Quantity of substance

If a plurality of memory chips are stacked to form a multi-chip package memory to increase capacity, then the integration degree and capacity are improved, but the heating value increases

Engineering Contradiction:
Improvememory capacityVSAvoidheating value
Core Design Contradiction:
Quantity of substanceVSTemperature

Solution Approach 1:

By segmenting the memory into multiple banks with independent power control, the system can isolate heat generation to only the actively used portions. This spatial segmentation of power consumption reduces overall thermal load and prevents heat accumulation across the entire stacked structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent converts the potential harm of high power consumption into a controllable feature by implementing selective banking. The power that would otherwise be wasted in inactive regions is now dynamically managed, turning the heating issue into an opportunity for thermal optimization through selective activation of memory banks based on access patterns.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Use of energy by moving object

If power control is applied to reduce current consumption in non-used circuits, then power usage is optimized, but circuit complexity increases

Engineering Contradiction:
Improvepower usageVSAvoidcircuit complexity
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The power control circuit is designed with multi-functionality, serving both as a power management mechanism and as a bank selection control system. This universal circuit performs dual roles: it manages power distribution to reduce consumption while simultaneously controlling which memory banks are accessible, thereby reducing complexity compared to having separate control mechanisms.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12288596B2Semiconductor memory device, processing system including the same and power control circuit for the same
Publication Date: 2025.04.29 SK HYNIX INC
  • US12288596B2 patent drawing
  • US12288596B2 patent drawing
  • US12288596B2 patent drawing

AI summary

A semiconductor memory device may include a plurality of memory cells wherein identifiers may be provided to the memory cells. The semiconductor memory device may include a first circuit, a second circuit and a power control circuit. The first circuit may include a first power terminal and a second power terminal. The second circuit may include a third terminal and a fourth terminal. The power control circuit may be configured to apply a first power voltage or a ground voltage to the first power terminal and to apply the ground voltage to the second power terminal based on the identifiers.