3D LED Shell Passivation for Higher Sub-Pixel Definition
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Solution Overview
Problem
The challenge in improving the definition of screens with light-emitting diodes is the mixing of light radiation between adjacent sub-pixels, exacerbated by miniaturization, which leads to decreased light intensity due to crystalline defects and non-radiative recombinations, affecting the internal quantum efficiency of three-dimensional LEDs.
Innovation Solution
A light-emitting diode with a three-dimensional shape featuring a semiconductor core doped with one conductivity type and a shell doped with a second conductivity type, including an implanted portion with reduced conductivity, achieved through ion implantation to neutralize charge carriers and reduce parasitic defects, thereby enhancing injection and internal quantum efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the dimensions of three-dimensional light-emitting diodes are reduced to improve screen definition, then the resolution and number of pixels increase, but the light intensity emitted by the LEDs considerably decreases due to crystalline defects and non-radiative recombinations
Solution Approach 1:
The patent applies local quality by creating a shell structure with different doping type and concentration than the core, and by introducing a passivation layer at specific locations (the base of the LED) to address crystalline defects locally. This allows the LED to maintain small dimensions while improving light emission efficiency at the problematic base region where defects are most concentrated.
Solution Approach 2:
The patent changes physical and chemical parameters including doping concentration, doping type, and structural composition to improve LED performance at nanometric dimensions. By adjusting these parameters in the shell and passivation layer, the patent compensates for the degradation caused by miniaturization and enhances internal quantum efficiency despite the reduced size.
2Reliability
If ion implantation is performed to reduce conductivity and eliminate parasitic effects, then internal quantum efficiency improves, but the manufacturing process complexity increases
Solution Approach 1:
The patent applies preliminary action by performing ion implantation during the epitaxial growth process itself, rather than as a separate post-processing step. The implantation is integrated into the MOCVD or HVPE growth stages, allowing defect passivation to occur in-situ during manufacturing, which reduces overall process complexity while achieving the desired improvement in internal quantum efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces conductivity in the implanted portion, improving light emission efficiency and internal quantum efficiency while minimizing non-radiative recombinations, thus enhancing the performance of three-dimensional light-emitting diodes.
Implementation Method 1
achieved through ion implantation to neutralize charge carriers and reduce parasitic defects
Implementation Method 2
An optoelectronic device is a device configured to perform a conversion of an electric signal into an electromagnetic radiation
Data Source
AI summary
A light-emitting diode for an optoelectronic device or for an optoelectronic member, the light-emitting diode including a semiconductor core, a semiconductor shell, an implanted portion delimiting within the semiconductor shell at least one passivated portion and at least one active portion, the at least one passivated portion having a conductivity strictly lower than a conductivity of said at least one active portion.