3D Memory Align Key Structure for Precise Photolithography
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing data storage capacity while maintaining reliability.
Innovation Solution
The semiconductor device incorporates a plate layer with align keys comprising first and second align layers stacked vertically, featuring varying lengths and an air gap, and a light transmissive layer surrounding the align keys, enhancing alignment precision during photolithography processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged three-dimensionally to increase data storage capacity, then data storage capacity is improved, but manufacturing precision and alignment reliability deteriorate
Solution Approach 1:
The align key is segmented into multiple distinct layers (first align layer and second align layer) with different functions. The first align layer provides primary alignment reference, while the second align layer provides additional alignment reference at a different height, enabling precise alignment in three-dimensional memory structures without compromising manufacturing precision
Solution Approach 2:
The alignment system transitions from two-dimensional planar alignment to three-dimensional alignment by adding vertical layering. The first and second align layers are positioned at different heights (different z-coordinates) above the plate layer, providing alignment references in the vertical dimension that are critical for three-dimensional memory cell arrangements
2Ease of manufacture
If align key structure is simplified to reduce device complexity, then ease of manufacture is improved, but alignment precision deteriorates
Solution Approach 1:
Multiple alignment functions are merged into a single integrated align key structure that includes both the first and second align layers. This combined structure provides multiple alignment references simultaneously, achieving high alignment precision without requiring separate alignment structures for different layers, thus maintaining ease of manufacture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the reliability and efficiency of data storage by ensuring precise alignment and reducing manufacturing defects, thereby increasing data storage capacity.
Implementation Method 1
a light transmissive layer. The first align layer and the second align layer may overlap each other in the first direction
Data Source
AI summary
A semiconductor device may include an align key on a plate layer. The align key may include a first align layer connected to a second align layer. The first align layer may have a first length in a first direction, a second length in a second direction, and an air gap in the first align layer. The second align layer may be on the first align layer and may have a third length. The first direction may be perpendicular to an upper surface of the plate layer. The second length may be smaller than the first length. The third length may be smaller than the second length in the second direction.