3D Memory Block Stabilization Structures for Slit-Induced Stress
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Solution Overview
Problem
In 3D memory device fabrication, the formation of slit structures between memory blocks leads to structural instability and reduced production yield due to stress and deformation, as well as challenges in filling complex thin film structures, which affects the density and reliability of memory cells.
Innovation Solution
The introduction of stabilization structures, formed from the remnants of the dielectric stack, which replace parts of the sacrificial layers, provides structural support between memory blocks, reducing etch loading and slit structure pitch, thereby enhancing yield and stability during the gate-replacement process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Weight of moving object
If slit structures are formed between memory blocks, then memory block separation is achieved, but structural instability and stress deformation occur
Solution Approach 1:
The patent introduces stabilization structures as intermediary elements between memory blocks. These stabilization structures are formed from the remaining dielectric stack material and act as mediators that provide mechanical support and stress relief, preventing the structural instability and deformation that would otherwise occur at the interfaces between adjacent memory blocks.
Solution Approach 2:
The stabilization structures are formed using composite material composition, utilizing the remaining dielectric stack material (which includes multiple layers of different dielectric materials) to create a structurally robust interface region. This composite structure provides both separation and stability functions simultaneously.
2Quantity of substance
If complex thin film structures are formed, then memory cell density increases, but manufacturing difficulty increases
Solution Approach 1:
The stabilization structures are formed as a preliminary action before final memory cell fabrication steps. By pre-forming these stabilizing interfaces using the remaining dielectric material, the patent simplifies subsequent manufacturing steps and reduces the complexity of handling thin film structures during later processing.
Solution Approach 2:
The dielectric stack material serves a dual purpose: it functions as both the insulating layer for memory cells and as the source material for stabilization structures. This self-service approach eliminates the need for additional separate materials or complex assembly steps, thereby reducing manufacturing difficulty while maintaining high memory cell density.
3Manufacturing precision
If etch loading is reduced, then fabrication precision improves, but process time increases
Solution Approach 1:
The patent segments the etching process into multiple stages, with stabilization structures already in place to support the memory block interfaces. This segmentation allows for reduced etch loading in critical regions while maintaining overall process efficiency, as the stabilization structures provide mechanical support that enables more precise, lower-loading etch parameters.
Data Source
AI summary
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a plurality of memory blocks in a plan view and at least one stabilization structure extending laterally to separate adjacent ones of the memory blocks in the plan view. Each of the memory blocks includes a memory stack including vertically interleaved conductive layers and first dielectric layers, and a plurality of channel structures each extending vertically through the memory stack. The stabilization structure includes a dielectric stack including vertically interleaved second dielectric layers and the first dielectric layers.