Solid-State Devices TRIZ Cases

Selective ferroelectric film placement on active regions avoids weak fields over isolation trenches, improving retention and reducing read/write errors.

Combining polysilicon and oxide TFTs with overlapping electrode-capacitor layouts stabilizes voltage and supports higher-performance display circuits.

Dielectric stabilization structures between 3D memory blocks limit slit-induced stress and collapse risk while improving yield and cell density.

Shared Y-connected pin protection uses SCR-based clamping and switch-off control to cut ESD area and avoid false response to CAN and LVDS pulses.

Through-holes in the display substrate release heat from light emitting elements, reducing overheating and extending LED lifespan.

A high-haze diffuser film with an optical film reduces reflected light and halo size, improving dynamic contrast and light uniformity.

A transparent insulating heat-conductive layer protects the planarization layer from thermal shrinkage, preserving blue light transmittance and color temperature.

Embedding a ceramic substrate in BMC and RDL layers improves stability, heat handling, and signal routing for compact high-resolution camera modules.

A three-emitter OLED uses phosphorescent sensitization and TADF or exciplex transfer to sharpen emission onset while preserving quantum efficiency.

Resonant energy transfer at quantum dot layer discontinuities cuts injection barriers, enabling low-voltage QD-LEDs with higher efficiency.

A two-width partition layer between color filters redirects light to suppress shading, sensitivity loss, and color mixing at image edges.

A hollow structure in the pixel electrode overlap region cuts parasitic capacitance, improving charging rate and display picture quality.

Separated logic and memory dies with TSV-linked vertical stacks improve signal speed while easing base die complexity and cost.

Offset dual aperture regions and folded data lines maintain continuous light emission in 3D displays, preventing moire patterns.

A protruding TFT channel uses top and sidewall electrodes to raise current and charging speed without enlarging the non-display area.

Placing the auxiliary electrode in a separate layer increases aperture ratio and storage capacitance while reducing flicker in display panels.

Hard mask recesses and marks replace extra photoresist patterning, cutting photomasks and protecting transistor structures during contact formation.

Opposed-face 2D and depth sensors with optical concentrators cut misalignment, size, and cost in simultaneous scene capture.

An intermediate conductive protective layer blocks passivation-layer oxygen diffusion, stabilizing resistance and turn-on in top-gate display panels.

Opposed side gates create two independently controlled fin channels, boosting transistor density while enabling lateral transport and tunnel-current control.

Differentiated electrochemical porosification creates GaN mesas with varied porosity levels, avoiding localized dopant implantation for multi-wavelength InGaN diodes.

Electric fields between electrode lines and partition walls place semiconductor LEDs precisely, enabling mask-free RGB transfer for flexible displays.

Differentiated electrochemical porosification creates GaN-based mesas with distinct porosity levels, avoiding localized dopant implantation.

A tapered through electrode improves metal filling in solid-state image sensors, reducing voids and keeping resistance low.

Raised projections in a stacked photodiode lens assembly prevent lens damage during polishing, enabling thinner detection substrates.

A same-layer filling structure around the display hole prevents cutting cracks, film separation, and bubbles during back film attachment.

Separate switch transistors and a capacitive element let FD-based pixel addition work across multiple conversion efficiency states with better noise control.

A groove gate creates a 3D TFT channel that boosts driving current while preserving aperture ratio and limiting off-state leakage.

A recessed bonding pad layout moves interference away from spin coating, preventing stripe defects and improving color filter uniformity.

A light-guide-filled corner opening relieves bending stress and restores corner emission for four-sided curved flexible displays.

Embedded conductive vias in stacked sensor substrates improve signal and power line coupling stability without relying only on pad coupling or TSVs.

A shared pad-electrode layout lets multiple LED elements be controlled individually with only n+1 interconnects, simplifying routing and improving heat dissipation.

A stepped fan-out package replaces thick wire-bond POP connections with redistribution layers and posts to keep thin packages cooler.

Overlapping source and compensation electrodes keep parasitic capacitance constant while freeing pixel area to reduce flicker and raise aperture rate.

An inverted trapezoidal through electrode and shielding layer cut pad misalignment and coupling noise in a three-layer stacked image sensor.

Curved lenses and a dielectric layer collimate chip light to narrow the viewing angle and reduce crosstalk in display panels.

A three-layer opto-electronic package replaces copper links with optical transceivers to raise bandwidth while improving power efficiency.

HEMT driving transistors deliver high LED sub-pixel current without wider channels, while self-alignment simplifies transfer for high-luminance displays.

An n-type transfer region and separation film route photodiode charge into a holding section to raise sensitivity and saturation signal.

Different-sized sub-pixels and a depressed micro lens improve low-light sensitivity while preserving dynamic range across luminance levels.

Vertical stacking enlarges ReRAM cell area within the same footprint, lowering forming voltage and avoiding external high-voltage circuitry.

One light emitter shared across multiple sub-pixels cuts LED transfer complexity while blocking leakage current and preserving color accuracy.

Shared etching of pixel and source-drain electrodes cuts photomasks, shortens display processing time, and helps avoid over-etching.

Reflective packaging and sprayed red and green quantum layers avoid precise butt joining, easing LED chip offset assembly.

A base die selectively routes one data bump across stacked memory dies, cutting redundant interconnects while improving power distribution.

Selective coating removal forms a precise LED light window that avoids glass-plate refraction and improves encoder signal quality and resolution.

Diffuse-reflective beads cover the Zener diode in an LED package to cut light absorption and improve output uniformity.

Dual conductive and insulative hydrogen barriers protect ferroelectric trench capacitors, enabling dense integration with planar capacitors.

Capacitors and opposite-polarity switching create fully differential pixel outputs early, cutting noise without amplifier feedback.