LED Sub-Pixel Driving With HEMT Current Supply and Self-Alignment
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Solution Overview
Problem
Display devices using LEDs face challenges in supplying high current to sub-pixels for high luminance images without increasing the channel width of driving transistors, which can lead to space constraints and complex alignment processes during manufacturing.
Innovation Solution
The use of high electron mobility transistors (HEMTs) to supply high current to LEDs, integrated with a self-assembling method for precise alignment and reduced manufacturing complexity, allowing for high luminance images without expanding the transistor design area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the channel width of the driving transistor is increased to supply high current for high luminance images, then the current supply capability is improved, but the transistor design area increases and occupies more space
Solution Approach 1:
The patent changes the material parameter of the transistor from conventional semiconductor materials to black phosphorus material, which has superior electron mobility properties. This parameter change allows the transistor to achieve higher current supply capability without increasing the channel width, thus resolving the contradiction between power output and device area.
2Manufacturing precision
If more transistors and LEDs are transferred and aligned to increase resolution, then the display resolution is improved, but the manufacturing complexity and alignment precision requirements increase
Solution Approach 1:
The patent employs a self-aligning transfer mechanism where the black phosphorus transistor and LED structures automatically align during the transfer process. This self-service approach eliminates the need for complex external alignment procedures, reducing manufacturing complexity while achieving high resolution through increased transistor and LED density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient high current supply to LEDs for high luminance images while minimizing transistor design area and simplifying the alignment process, improving manufacturing reliability and efficiency.
Implementation Method 1
the first transistor is a high electron mobility transistor (HEMT). Accordingly, the first transistor is formed as a high electron mobility transistor having a high electron mobility to supply a high current to the light emitting diode
Data Source
AI summary
A display device can includes a substrate in which a plurality of sub pixels are defined; a light emitting diode disposed in a sub pixel among the plurality of sub pixels on the substrate; and a first transistor which is disposed in the sub pixel and configured to supply a driving current to the light emitting diode. Also, the first transistor can be a high electron mobility transistor (HEMT). Accordingly, the first transistor can have a high electron mobility to supply a high current to the light emitting diode and display a high luminous image.