Quantum Dot Micro-LED Structure for Simplified RGB Fabrication

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Solution Overview

Problem

Existing methods for fabricating micro-LED displays are complex, involving the singulation, sorting, and transfer of blue, red, and green micro-LEDs from separate wafers, which complicates the process and reduces efficiency.

Innovation Solution

A semiconductor device and method that includes a light-emitting structure with ohmic contacts and a light-conversion device with embedded quantum dots in porous structures, where the light-conversion device is formed on the light-emitting device, enhancing color purity and efficiency, and allowing for the direct transfer of micro semiconductor devices emitting different colors onto a display substrate without singulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If separate wafers are used for blue, red, and green micro-LEDs with singulation, sorting, and transfer processes, then color purity can be maintained, but the fabrication process becomes complex and efficiency decreases

Engineering Contradiction:
Improvecolor purityVSAvoidfabrication process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines multiple light-emitting devices (blue micro-LEDs and quantum dot conversion layers) into a single integrated structure. The quantum dots are embedded in porous structures that are formed directly on the light-emitting devices, eliminating the need for separate fabrication wafers and complex sorting/transfer processes while maintaining color purity through the quantum confinement effect of quantum dots

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent utilizes quantum confinement effect by controlling the size parameters of quantum dots (typically 2-50 nm) to precisely tune emission wavelengths. By changing the quantum dot size parameter, different colors can be achieved from the same blue LED source, replacing the need for separate red and green LED wafers

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If separate wafers are used for blue, red, and green micro-LEDs with singulation, sorting, and transfer processes, then color purity can be maintained, but productivity decreases

Engineering Contradiction:
Improvecolor purityVSAvoidfabrication efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent merges the fabrication of multiple color devices into a single wafer-scale process. Quantum dots are deposited and processed over entire arrays of blue micro-LEDs simultaneously, enabling parallel fabrication of red and green emitting devices without the need for sequential handling of separate wafers

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The porous structures are formed and quantum dots are embedded in advance before final device assembly. This preliminary preparation of the light-conversion device allows for streamlined integration with the light-emitting structure, eliminating time-consuming post-fabrication sorting and transfer operations

Inventive Principle:
Principle #10Preliminary action

3Power

If quantum dots are embedded in porous structures formed on light-emitting devices, then blue to red and blue to green power conversion efficiencies are improved, but device structure becomes more complex

Engineering Contradiction:
Improvepower conversion efficiencyVSAvoiddevice structure
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent employs porous structures (such as anodized aluminum oxide templates with controlled pore sizes and distributions) as the substrate for quantum dot embedding. The porous architecture provides high surface area for quantum dot attachment, enhanced light scattering for improved optical path length, and tunable optical properties, all while maintaining a relatively simple fabrication process through self-organized pore formation

Inventive Principle:
Principle #31Porous materials

Solution Approach 2:

The patent creates a composite light-conversion device combining porous matrix material (e.g., aluminum oxide, titanium dioxide, or polymer structures) with semiconductor quantum dots. This composite structure leverages the optical properties of the porous material for light management and the quantum confinement properties of quantum dots for wavelength conversion, achieving high power conversion efficiency

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach simplifies the fabrication of micro-LED displays by enabling the direct transfer of micro semiconductor devices with high color purity and improved blue to red and blue to green power conversion efficiencies, reducing the complexity of the manufacturing process.

Implementation Method 1

a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, wherein a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Implementation Method 2

one or more porous structures with embedded quantum dots, wherein a first portion of the light-conversion device comprises a first plurality of quantum dots for converting light produced by the first light-emitting device

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS11757072B2Semiconductor devices incorporating quantum dots
Publication Date: 2023.09.12 SAPHLUX INC
  • US11757072B2 patent drawing
  • US11757072B2 patent drawing
  • US11757072B2 patent drawing

AI summary

In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein each of the plurality of light-emitting devices comprises a first ohmic contact and a second ohmic contact; and a light-conversion device with embedded quantum dots, wherein a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, wherein a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color.