Array Substrate Groove Gate Structure for 3D TFT Channel Width
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Solution Overview
Problem
The challenge in OLED technology is to increase the driving current while maintaining a high aperture ratio and reducing off-state leakage current, which is exacerbated by the need for a larger channel width in thin film transistor devices with high PPI, leading to a contradiction in design where increased drive current results in higher leakage current.
Innovation Solution
The solution involves creating a three-dimensional channel structure on the array substrate by stacking a gate insulating layer and gate with a groove structure over the active layer, effectively increasing the channel width in a disguised form, allowing for higher driving and switching currents without compromising the aperture ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the width of the channel region is increased to improve driving current, then the driving current increases, but the aperture ratio decreases
Solution Approach 1:
The patent applies dimensionality change by transforming the channel structure from a conventional two-dimensional planar configuration to a three-dimensional groove structure. The gate groove extends vertically into the active layer, creating channel regions on multiple surfaces (top surface and side surfaces). This dimensional transformation allows the channel width to be effectively increased through the vertical dimension without occupying additional horizontal area, thereby improving driving current while maintaining aperture ratio.
2Power
If the channel width/length ratio is increased to improve driving current, then the driving current increases, but the off-state leakage current increases
Solution Approach 1:
The patent applies local quality by creating non-uniform channel structures with different properties in different regions. The groove structure concentrates the channel formation in specific localized areas (top surface and side surfaces) while maintaining effective channel length control. This localized channel configuration allows for high driving current through increased effective channel width while the controlled groove geometry prevents excessive leakage by maintaining proper channel length and creating effective electrical isolation.
3Power
If the channel width is increased to improve driving current, then the driving current increases, but the switching current ratio decreases
Solution Approach 1:
The dimensionality change to a three-dimensional groove structure enables independent optimization of channel width and channel length. The vertical groove geometry increases the effective channel width (improving driving current) while the groove depth and shape allow precise control of the current path length. This decoupling of width and length control through dimensional transformation enables simultaneous optimization of both driving current and switching current ratio.
Data Source
AI summary
The present application provides an array substrate and a manufacturing method thereof. The array substrate includes a substrate; an active layer comprising a channel region; a gate insulating layer; a gate corresponding to the channel region of the active layer; and a source and a drain disposed at opposite ends of the active layer, wherein the gate has a groove structure, the groove structure has an opening facing the active layer, and a region of the groove structure corresponding to the active layer is the channel region.