Semiconductor Contact Mask Layout With Fewer Photomasks
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor structures face challenges in reducing manufacturing cost and process complexity, particularly due to the need for multiple photomasks and the risk of damaging transistor structures during contact formation.
Innovation Solution
The semiconductor structure incorporates a substrate with buried word line structures and a transistor structure, featuring a first hard mask layer with recesses and hard mask marks, which eliminates the need for a patterned photoresist layer in the second region, reducing the number of photomasks required and protecting the transistor structure during contact formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple photomasks are used to protect the transistor structure during contact formation, then the transistor structure is protected from damage, but the manufacturing cost and process complexity increase
Solution Approach 1:
The patent combines the protection function into the first hard mask layer itself by forming recesses that accommodate hard mask marks, eliminating the need for separate patterned photoresist layers. This merging of functions reduces the number of photomasks from multiple to just the first and second hard mask layers, thereby reducing process complexity while maintaining protection reliability
Solution Approach 2:
The patent extracts and eliminates the patterned photoresist layer from the process by using the recesses in the first hard mask layer to directly define the contact regions. This extraction removes the need for additional photomasks and simplifies the manufacturing process while still providing adequate protection to the transistor structure
2Reliability
If multiple photomasks are used to protect the transistor structure during contact formation, then the transistor structure is protected from damage, but the manufacturing cost increases
Solution Approach 1:
The patent merges the protection function into the existing hard mask layer structure, eliminating the need for separate patterned photoresist layers and additional photomasks. This reduces material costs and process costs while maintaining the protection reliability of the transistor structure during contact formation
Solution Approach 2:
The patent extracts and removes the patterned photoresist layer and associated photomasks from the manufacturing process. By using the recesses in the first hard mask layer to directly define contact regions, the patent eliminates unnecessary steps and materials, thereby reducing manufacturing cost while preserving protection functionality
Data Source
AI summary
A semiconductor structure including a substrate, buried word line structures, a transistor structure, a first hard mask layer, hard mask marks, a second hard mask layer, and contacts. The substrate includes a first region and a second region. The buried word line structures are located in the substrate in the first region. The transistor structure is located on the substrate in the second region. The first hard mask layer is located on the transistor structure. The first hard mask layer has recesses. The hard mask marks are located in the recesses. The second hard mask layer is located on the substrate in the first region. The second hard mask layer has openings. The contacts are located in the openings.