3D TFT Channel Structure for Narrow-Bezel Display Panels
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Solution Overview
Problem
Large-size and high-definition liquid crystal display panels with narrow bezels face challenges due to increased load on Gate Driver on Array (GOA) techniques, where thin film transistors require a larger channel width to length ratio, leading to increased TFT size that does not satisfy narrow bezel requirements.
Innovation Solution
A display panel design featuring a thin film transistor with a protruding structure on the substrate, where the source and drain electrode layer covers the protruding structure's surface and side walls, increasing channel width without increasing the TFT's projection area, thus enhancing current and display performance while maintaining narrow bezels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the channel width is increased on the plane to increase the ratio of channel width to channel length, then the current carrying capacity of the thin film transistor is improved, but the size of each TFT increases which cannot satisfy narrow bezel requirements
Solution Approach 1:
The patent transitions from a planar channel structure to a three-dimensional protruding structure. The channel forms a ridge that extends upward from the substrate, allowing the channel width to be measured not only in the lateral direction but also along the vertical sidewalls. This dimensional change enables increased effective channel width without increasing the lateral footprint of the TFT, thereby improving current carrying capacity while maintaining narrow bezel requirements.
Solution Approach 2:
The gate electrode structure is designed to wrap around the protruding channel structure, with the gate insulating layer and gate electrode extending along the sidewalls of the channel. This nested configuration allows the gate to control carriers flowing through the channel from multiple directions (top and sidewalls), effectively increasing the channel width without increasing the planar area occupied by the TFT.
2Productivity
If the channel width to channel length ratio is increased to handle increased load in large-size high-definition panels, then the driving performance is improved, but the TFT occupies more space in the non-display area
Solution Approach 1:
By forming the channel as a protruding ridge structure, the patent utilizes the vertical dimension to increase the effective channel width. The channel sidewalls provide additional conduction paths that contribute to the overall channel width, enabling the TFT to handle increased load in large-size high-definition panels without occupying more lateral space in the non-display area.
Solution Approach 2:
The patent changes the geometric parameters of the channel structure by creating a protruding form with specific height and width dimensions. The channel width is effectively increased by including the sidewall portions, while the channel length remains constrained. This parameter change allows the TFT to achieve higher driving performance with reduced area occupation in the non-display region.
Data Source
AI summary
A display panel is disclosed. A thin film transistor in a non-display area is provided with a protruding structure, and a source and drain electrode layer is disposed on the protruding structure. A source electrode and a drain electrode of the source and drain electrode layer both cover a first surface, a first side wall, and a second side wall of the protruding structure. A channel width of the thin film transistor is increased, and a ratio of the channel width to a channel length of the thin film transistor is increased. Therefore, a current of the thin film transistor is increased, a charging rate of the thin film transistor is improved, and a display performance of a display panel is improved.