Hybrid TFT Display Structure for Voltage-Stable Pixel Circuits
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Solution Overview
Problem
Current semiconductor structures for display devices cannot combine polysilicon TFTs and metal oxide TFTs, and lack related circuits, limiting the integration of these technologies in flat-panel displays.
Innovation Solution
A semiconductor structure for display devices is proposed, comprising a substrate with multiple transistors and capacitors, including a silicon semiconductor and oxide semiconductor transistors, along with specific electrode configurations to enhance capacitance and voltage stabilization, allowing for the integration of polysilicon and metal oxide TFTs in a single display device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If polysilicon TFTs and metal oxide TFTs are used separately in display devices, then each transistor type can perform its specific function (high carrier mobility for polysilicon, low leakage current for metal oxide), but they cannot be combined in a single display device, limiting the integration and overall performance improvement
Solution Approach 1:
The display device is segmented into different functional regions with different transistor types. Polysilicon TFTs are used for switching elements requiring high carrier mobility, while metal oxide TFTs are used for elements requiring low leakage current. This segmentation allows each transistor type to be optimized for its specific function while being integrated in the same display device.
Solution Approach 2:
Different transistor types are applied to different locations within the display device based on functional requirements. The polysilicon TFTs are placed where high carrier mobility is needed, while metal oxide TFTs are placed where low leakage current is critical. This local quality approach enables optimal performance in each region while achieving overall integration.
2Reliability
If conventional semiconductor structures are used without additional circuits, then the device structure remains simple, but no related circuits are provided to enhance performance or stabilize operation
Solution Approach 1:
Storage capacitors are pre-configured in the circuit to store charge and maintain voltage levels during operation. These capacitors are built into the transistor structure to provide preliminary voltage stabilization before any performance degradation occurs, ensuring reliable operation throughout the display device lifecycle.
Data Source
AI summary
A display device is provided. A first transistor, a second transistor, and a third transistor are disposed above the surface of a substrate. The first transistor includes a first semiconductor and a first gate electrode. The first semiconductor includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of the normal direction of the surface. The second transistor includes a second semiconductor including a first oxide semiconductor. The third transistor includes a third semiconductor and a third gate electrode. The third semiconductor includes a second oxide semiconductor. The third gate electrode overlaps the third semiconductor in view of the normal direction of the surface. A first electrode is disposed above and electrically connected to the third semiconductor. The first electrode overlaps the third gate electrode in a cross-sectional view of the display device.