3D Memory Stack Support Slits for Word-Line Connection Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Three-dimensional nonvolatile memory devices face challenges in maintaining operational reliability due to the disconnection of conductive layers for select lines and word lines, which affects the stability and performance of the semiconductor device.
Innovation Solution
A semiconductor device with a stack structure featuring alternately stacked conductive patterns and interlayer insulating layers, including first and second slits that penetrate the conductive patterns for select lines and word lines, and support structures to ensure stable connections, along with a manufacturing method that involves forming specific holes, filling sacrificial patterns, and removing exposed material layers to create conductive patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conductive layers for select lines and word lines are stacked in three-dimensional structure, then integration density is improved, but disconnection between conductive layers occurs reducing reliability
Solution Approach 1:
The patent divides the continuous conductive layer into segmented portions separated by slits. The select line conductive layer is divided into first and second portions by a first slit, and further divided into multiple segments by second slits. This segmentation prevents stress accumulation and maintains electrical connection reliability while preserving high integration density through the three-dimensional stacked structure
Solution Approach 2:
The patent applies different structural characteristics to different regions: the conductive layers have slits at specific locations where stress concentration would occur, while maintaining continuous conductive paths in other regions. The support structures are selectively positioned at bottoms of slits to provide localized reinforcement. This local modification approach maintains overall connection reliability while enabling three-dimensional integration
2Reliability
If support structures are added to prevent disconnection, then connection reliability is improved, but device complexity increases
Solution Approach 1:
The patent introduces support structures as intermediary elements positioned at the bottoms of slits within the conductive layers. These support structures act as mediators that bridge the gaps created by slits and prevent disconnection between conductive portions. The support structures are integrated into the existing stack structure without requiring separate complex assembly processes, thus improving reliability while minimizing added complexity
Data Source
AI summary
There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of conductive patterns and a plurality of interlayer insulating layers, which are alternately stacked on a substrate; a plurality of channel structures extending in a first direction substantially perpendicular to the substrate to penetrate the stack structure; at least one first slit extending in a second direction substantially horizontal to the substrate while penetrating conductive patterns for select lines among the plurality of conductive patterns; a second slit extending in the second direction while penetrating the conductive patterns for select lines; and a plurality of support structures disposed on a bottom of the second slit, the plurality of support structures penetrating conductive patterns for word lines among the plurality of conductive patterns.