Stacked Magnetic Memory Layout to Protect the Switching Element

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Solution Overview

Problem

Existing magnetic memory devices face challenges in integrating a magnetoresistance effect element and a switching element effectively, particularly in preventing damage during manufacturing processes that affect the characteristics of the switching element.

Innovation Solution

A stacked structure is implemented where the switching element is positioned on the lower layer side of the magnetoresistance effect element, with specific interlayer insulating layers and electrodes configured to protect the switching element during etching processes, ensuring its integrity and functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the switching element is integrated with the magnetoresistance effect element in a stacked structure, then the memory device achieves higher integration density and functionality, but the switching element is vulnerable to damage during ion beam etching processes

Engineering Contradiction:

Improveintegration densityVSAvoidswitching element integrity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

An etch-resistant film is formed on the switching element before the magnetoresistance effect element in the stacking sequence. This preliminary protective layer is specifically designed to resist ion beam etching damage, allowing the switching element to be processed alongside the magnetoresistance effect element without degradation. The etch-resistant film serves as a sacrificial protective layer that can be removed later, having already protected the switching element during critical etching steps.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The etch-resistant film acts as a cushioning layer that absorbs and protects the switching element from the harmful effects of ion beam etching. By placing this protective layer between the ion beam source and the switching element during fabrication, the switching element is shielded from direct ion bombardment that would otherwise cause damage or degradation to its electrical characteristics.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

2Volume of moving object

If the switching element is positioned on the lower layer side of the magnetoresistance effect element, then the stacked structure achieves compact design, but the switching element is exposed to ion beam etching from the upper direction

Engineering Contradiction:

Improvedevice footprintVSAvoidion beam etching damage

Core Design Contradiction:

Volume of moving objectVSObject-affected harmful factors

Solution Approach 1:

The etch-resistant film is deposited on the switching element before the magnetoresistance effect element is formed above it. This preliminary protective coating is applied in advance to protect the switching element from subsequent ion beam etching processes that will be performed from the upper direction, allowing the compact stacked configuration to be maintained while protecting the lower-layer switching element.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The etch-resistant film serves as an intermediary layer between the ion beam etching process (coming from above) and the switching element (located below). This intermediate protective layer intercepts the ion beam before it can directly impact the switching element, allowing the compact vertical stacking to proceed without compromising the switching element's integrity.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for the production of magnetic memory devices with excellent characteristics by preventing damage to the switching element during ion beam etching and ensuring reliable switching functionality, thereby enhancing the overall performance of the memory device.

Implementation Method 1

a magnetoresistance effect element and a switching element are stacked

Methodology Applied

Scientific EffectMagnetoresistance effect: Magnetoresistance

Implementation Method 2

when a pattern of the magnetoresistance effect element is formed by ion beam etching, it is necessary to increase the thickness of an etch-resistant film

Methodology Applied

Scientific EffectIon beam etching: Ion Beam

Data Source

PatentUS20230301116A1Magnetic memory device

Publication Date: 2023.09.21 KIOXIA CORP

AI summary

According to one embodiment, a magnetic: memory device includes a stacked structure in which a magnetoresistance effect element and a switching element are stacked. The switching element is provided on a lower layer side of the magnetoresistance effect element, and when viewed in a stacking direction of the magnetoresistance effect element and the switching element, a pattern of the switching element is located inside a pattern of the magnetoresistance effect element.