3D Memory Channel Structure With Oxidized Buffer Layer Reliability
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Solution Overview
Problem
The operational reliability of three-dimensional semiconductor memory devices is compromised as more memory cells are stacked vertically, leading to deteriorated performance.
Innovation Solution
A semiconductor memory device design incorporating a core insulating layer, a semiconductor structure with a channel portion and capping portion, an oxidized buffer layer, and alternating conductive and insulating layers, along with a manufacturing method involving material layer stacking, opening formation, and gettering processes to enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If more memory cells are stacked vertically in a three-dimensional cell array, then storage capacity is improved, but operational reliability deteriorates
Solution Approach 1:
An oxidized buffer layer is introduced as an intermediary layer between the core insulating layer and the semiconductor channel portion. This buffer layer, containing metal oxide, acts as a mediator to prevent direct harmful interaction between the core insulating layer and the semiconductor structure, thereby improving operational reliability while maintaining the vertical stacking configuration for high storage capacity.
2Quantity of substance
If more memory cells are stacked vertically, then storage capacity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The oxidized buffer layer is formed in advance before the semiconductor structure is fully assembled. By pre-forming this protective layer with metal oxide, the patent prepares the interface in advance to prevent potential manufacturing defects and reliability issues that could arise from direct contact between the core insulating layer and semiconductor channels in high-density vertical stacking.
3Manufacturing precision
If metal catalysts are used in the manufacturing process, then crystallization is enhanced, but harmful factors are introduced
Solution Approach 1:
The patent converts the potentially harmful metal catalysts into a beneficial oxidized buffer layer. By oxidizing the metal catalysts that were used during crystallization, the harmful residual metal catalysts are transformed into a protective oxidized buffer layer containing metal oxide, which improves operational reliability while maintaining the benefits of uniform crystallization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design and manufacturing method improve operational reliability by ensuring uniform crystallization and reducing metal catalyst-induced issues, enhancing the performance of three-dimensional memory devices.
Implementation Method 1
forming an oxidized buffer layer by oxidizing the buffer layer exposed after the gettering process
Data Source
AI summary
The present disclosure relates to a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a core insulating layer, a semiconductor structure including a channel portion on a side wall of the core insulating layer and a capping portion covering one surface of the core insulating layer and coupled to the channel portion, a plurality of conductive layers and a plurality of insulating layers surrounding a side wall of the semiconductor structure, each of the plurality of conductive layers and each of the plurality of insulating layers alternating with each other, and a memory layer disposed between each of the plurality of conductive layers and the semiconductor structure.