3D Memory Device Vertical Channel Pillar Separation
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Solution Overview
Problem
The challenge lies in creating a three-dimensional memory device with higher storage capacity while maintaining operation performance, as critical dimensions in integrated circuits shrink, and existing techniques struggle to achieve this without compromising performance.
Innovation Solution
A method involving a precursor structure with a substrate, multi-layered stack, vertical channel pillars, and a barrier structure, where slits are formed to separate the pillars, and insulating layers are replaced with conductive layers, allowing for the formation of slit structures that enhance storage capacity and operation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If critical dimensions of devices are shrunk to increase storage capacity, then storage density is improved, but operation performance deteriorates
Solution Approach 1:
The patent transitions from two-dimensional planar memory cells to three-dimensional vertically-stacked memory structures. Multiple memory cell layers are stacked vertically above each substrate area, enabling increased storage capacity without further shrinking critical dimensions. The vertical channel pillars extend through multiple insulating layers stacked in the third dimension, allowing high-density storage while maintaining adequate cell dimensions for reliable operation.
Solution Approach 2:
The memory device is divided into multiple independent memory cell layers stacked vertically, with each layer containing complete memory cell structures including channel pillars, insulating layers, and conductive elements. This segmentation into discrete stacked layers increases storage capacity while each layer maintains sufficient dimensional characteristics for reliable operation.
2Quantity of substance
If three-dimensional stacked memory structures are implemented to increase storage density, then storage capacity is improved, but device complexity increases
Solution Approach 1:
The vertically-stacked channel pillars serve multiple functions simultaneously: they act as conductive pathways for multiple memory cell layers, provide structural support for the stacked insulating layers, and enable electrical connection between different memory cell levels. This multi-functionality reduces the need for separate components, thereby increasing storage density without proportionally increasing device complexity.
Solution Approach 2:
Multiple insulating layers are nested vertically around the channel pillars, with each layer containing complete memory cell structures within the same vertical space. This nesting arrangement achieves high storage density by utilizing the third dimension while maintaining a compact overall structure that does not linearly increase complexity with each added layer.
Data Source
AI summary
A three-dimensional memory device and a method of manufacturing a three-dimensional memory device are provided. The method includes providing a precursor structure including a substrate, a multi-layered stack, a plurality of vertical channel pillars and a barrier structure. A first slit and a second slit are then formed in the multi-layered stack and the substrate along a first direction, in which the first slit and the second slit have a pitch between thereof, and the second slit cuts the barrier structure. A portion of the second insulating layers is then replaced with a plurality of conductive layers. A first slit structure and a second slit structure are then formed in the first slit and the second slit, in which the first slit structure and the second slit structure separate the vertical channel pillars in a second direction that is different from the first direction.