3D Nonvolatile Memory Gate Structure With Supporters for Low Resistance
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Solution Overview
Problem
Existing three-dimensional nonvolatile memory devices face challenges in reducing gate electrode resistance and preventing process defects, which affect their performance and reliability.
Innovation Solution
The proposed solution involves a nonvolatile memory device design with gate electrodes stacked on a semiconductor substrate, where supporters made of dielectric or semiconductor material penetrate the gate electrodes, reducing resistance by using metal materials for the gate electrodes and dielectric supporters to maintain spacing and prevent collapse during etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate electrodes are made of conventional materials, then manufacturing process is simpler, but resistance of gate electrodes is high
Solution Approach 1:
The patent changes the material parameter of gate electrodes from conventional polysilicon to metal materials (tungsten, aluminum, or tantalum), which fundamentally alters the electrical resistance characteristic. This material substitution directly reduces gate electrode resistance while requiring updated fabrication processes for metal deposition and patterning.
Solution Approach 2:
The patent employs composite material structures in the gate electrode system, combining metal gate materials with dielectric or semiconductor supporter materials. This composite approach allows optimization of electrical properties through material selection while maintaining structural integrity during fabrication.
2Reliability
If supporters are not used, then device structure is simpler, but process defects occur during wet etch process
Solution Approach 1:
The supporters are formed in advance before the wet etch process to provide preventive support during subsequent manufacturing steps. This preliminary structural preparation prevents process defects by maintaining mechanical stability of the gate electrode structure during fabrication, particularly during wet etching operations.
Solution Approach 2:
The supporters act as intermediary structural elements between the gate electrodes and the substrate, providing mechanical support and preventing direct contact or damage during the wet etch process. These intermediary components protect the gate electrode structure from process-induced defects.
Data Source
AI summary
A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.