3D Memory Source Layer Texturing for Laser Absorption

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Solution Overview

Problem

Existing semiconductor devices face challenges in efficiently enhancing laser beam absorption for semiconductor materials, particularly in three-dimensional memory devices, which affect the crystallization process of semiconductor layers.

Innovation Solution

The formation of a three-dimensional memory device involves creating a textured pattern in the semiconductor layer to enhance laser beam absorption, achieved by irradiating a laser beam on an unactivated semiconductor layer with a textured pattern, which includes gaps ranging from 5 nm to 500 nm, and using a carbon-based material with laterally-extending cracks to further enhance absorption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If a textured pattern with gaps is formed in the semiconductor layer to enhance laser beam absorption, then the absorption efficiency is improved, but the manufacturing complexity increases

Engineering Contradiction:

Improvelaser beam absorption efficiencyVSAvoidtextured pattern structure

Core Design Contradiction:

Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent applies porous materials by forming a textured pattern with gaps (5 nm to 500 nm) in the semiconductor layer. This porous structure increases the surface area and creates multiple interfaces for laser beam interaction, thereby enhancing absorption efficiency without requiring complete structural redesign

Inventive Principle:

Principle #31Porous materials

Solution Approach 2:

The semiconductor layer is segmented into multiple regions with gaps between them, creating a textured pattern. This segmentation allows the laser beam to interact with multiple surfaces and interfaces, increasing overall absorption while maintaining manufacturability through patterned deposition or etching processes

Inventive Principle:

Principle #1Segmentation

2Use of energy by moving object

If carbon-based material with cracks is used to further enhance laser beam absorption, then the absorption efficiency is improved, but the device complexity increases

Engineering Contradiction:

Improvelaser beam absorption efficiencyVSAvoidcarbon-based material structure

Core Design Contradiction:

Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent uses composite materials by combining carbon-based material with crack patterns with the semiconductor layer. This composite structure provides additional laser beam absorption mechanisms through the crack patterns in the carbon material, while the combination allows each material to contribute its unique properties

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The carbon-based material incorporates laterally-extending cracks that create curved and irregular surfaces. These non-linear geometries increase light trapping effects and absorption paths for the laser beam, enhancing energy absorption efficiency

Inventive Principle:

Principle #14Spheroidality (Curvature)

3Use of energy by moving object

If the gap width in the textured pattern is reduced to enhance absorption, then the absorption efficiency is improved, but the manufacturing precision requirements increase

Engineering Contradiction:

Improvelaser beam absorption efficiencyVSAvoidgap width control

Core Design Contradiction:

Use of energy by moving objectVSManufacturing precision

Solution Approach 1:

The patent optimizes the gap width parameter within a specific range (5 nm to 500 nm) to achieve effective laser beam absorption. By defining this parameter range, the invention balances absorption efficiency with manufacturability, allowing standard fabrication processes to achieve the desired performance without requiring extreme precision

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The textured pattern and carbon-based material significantly improve the absorption efficiency of laser beams, facilitating effective crystallization of semiconductor materials and enhancing the performance of three-dimensional memory devices.

Implementation Method 1

the textured pattern enhances absorption of the laser beam

Methodology Applied

Scientific EffectLaser beam absorption: Absorption (EM radiation)

Implementation Method 2

irradiating a laser beam on the unactivated semiconductor layer to crystallize a portion of unactivated semiconductor material into a semiconductor source layer

Methodology Applied

Scientific EffectLaser crystallization: Crystallisation

Implementation Method 3

using a carbon-based material with laterally-extending cracks to further enhance absorption

Methodology Applied

Scientific EffectLaser beam absorption enhancement: Absorption (EM radiation)

Data Source

PatentUS20250359054A1Semiconductor device including laser beam absorption enhancement structures and methods for forming the same

Publication Date: 2025.11.20 SANDISK TECHNOLOGIES LLC

AI summary

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers that alternate along a vertical direction, memory openings vertically extending through the alternating stack, memory opening fill structures including a respective vertical semiconductor channel, a dielectric material portion located adjacent to the alternating stack, a semiconductor source layer including a polycrystalline doped semiconductor material, underlying a bottommost surface of the alternating stack, and contacting bottom ends of the vertical semiconductor channels, and an array of pillar structures having at least lower portions located below the dielectric material portion.