3D Memory Pillar Array Slit Width Variation
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Solution Overview
Problem
In three-dimensional memory array formation, the etch operation often results in unintended clipping, leading to structural integrity issues and shorting between components due to the unintentional extension of slits beyond intended profiles, which compromises the structural support and increases the risk of cantilever bending.
Innovation Solution
The solution involves excluding dummy pillars from the array near potential clipping regions and selectively widening the slit in those areas to prevent exposure and enhance structural stability, using dielectric material deposition to compensate for reduced structural integrity while preventing shorting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the etch operation is performed to form slits through the stack of layers, then access to memory cells is enabled, but unintended clipping occurs causing structural integrity issues and shorting between components
Solution Approach 1:
The patent applies preliminary action by forming dummy pillars at locations where clipping is anticipated to occur before performing the etch operation. These dummy pillars serve as protective structures that prevent unintended clipping and shorting during the subsequent etching process, thereby maintaining structural integrity while enabling access to memory cells.
Solution Approach 2:
The dummy pillars act as intermediary protective structures between the etch operation and the underlying memory cell structure. They mediate the interaction by absorbing the harmful effects of unintended clipping while allowing the necessary access to be achieved through the slit formation.
2Manufacturing precision
If dummy pillars are excluded from the array near potential clipping regions, then clipping is prevented, but structural support is reduced
Solution Approach 1:
The patent applies local quality by selectively excluding dummy pillars only from specific regions where clipping is anticipated to occur, while maintaining dummy pillars in other areas where structural support is needed. This localized modification prevents clipping in critical areas without compromising overall structural integrity.
3Stability of the object's composition
If the slit is selectively widened near excluded pillar regions, then structural stability is enhanced, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by selectively widening the slit only in specific regions where dummy pillars are excluded, rather than uniformly widening the entire slit. This localized approach provides structural stability where needed while minimizing the overall manufacturing complexity.
Data Source
AI summary
Methods, systems, and devices for three-dimensional memory array formation techniques are described. A memory device may include a stack of materials over a substrate. The memory device may include an array of first pillars and an array of second pillars extending at least partially through the stack of materials. One or more first pillars may be excluded from one or more columns of pillars of the array first pillars. The memory device may include dielectric material in a slit extending at least partially through the stack of materials. Based on the exclusion of the one or more first pillars, the slit may have a greater width at a first portion through the stack of materials than a second portion through the stack of materials. The dielectric material located in the slit may also have a greater width at the first portion than at the second portion.