3D Memory Gate Stack and Plug Layout for Reliable Vertical Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration density and reliability for data storage, particularly in three-dimensional memory devices where memory cells are arranged vertically, leading to limitations in data storage capacity and operational efficiency.
Innovation Solution
A three-dimensional semiconductor memory device is designed with a source structure, gate stacking structure, insulating structure, memory channel structure, separation structure, and penetration plug, featuring alternately stacked insulating and conductive patterns, and multiple insulating layers to enhance integration density and reliability, with specific configurations of plug and separation portions to optimize electrical connections and structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged vertically in three-dimensional structure, then data storage capacity is increased, but manufacturing precision and structural integrity become more difficult to maintain
Solution Approach 1:
The source structure is segmented into a cell region and an extension region, with the extension region providing additional source material that extends beyond the gate stacking structure. This segmentation allows the vertical memory cells to be formed with adequate source material supply while maintaining structural integrity during manufacturing processes.
Solution Approach 2:
The extension region is formed in advance before the gate stacking structure is completely assembled. This preliminary formation of the extension region ensures that source material is already in position and properly configured before subsequent manufacturing steps, preventing structural damage and maintaining precision throughout the fabrication process.
2Quantity of substance
If gate stacking structure with multiple insulating and conductive patterns is used, then integration density is improved, but device complexity increases
Solution Approach 1:
The gate stacking structure is divided into multiple discrete insulating patterns and conductive patterns stacked alternately. Each pattern serves a specific function (gate control, insulation, spacing), allowing high integration density through vertical stacking while keeping each individual pattern relatively simple in structure and fabrication.
Solution Approach 2:
Different regions of the gate stacking structure have different local properties - insulating patterns provide electrical isolation where needed, while conductive patterns provide gate control. This local differentiation of properties allows the structure to achieve high integration density without requiring every part to be complex, as each local region is optimized for its specific function.
3Reliability
If penetration plug and separation structure are formed with multiple portions at different levels, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The penetration plug is segmented into a first plug portion and a second plug portion at different levels, with the first plug portion extending to the same level as the first separation portion. This segmentation allows for staged formation and better electrical connection control, improving reliability while the modular nature keeps manufacturing manageable through systematic processing steps.
Solution Approach 2:
The first plug portion is formed to extend to the same level as the first separation portion before the second plug portion is formed. This preliminary action ensures proper alignment and electrical connection establishment in stages, improving reliability by ensuring each layer is properly positioned before adding subsequent layers, while maintaining manufacturing feasibility through sequential processing.
Data Source
AI summary
A three-dimensional semiconductor device includes: a source structure including a cell region and an extension region; a gate stacking structure disposed on the source structure, the gate stacking structure including insulating patterns and conductive patterns, which are alternately stacked on each other; an insulating structure disposed on the gate stacking structure, the insulating structure including a plurality of insulating layers; a memory channel structure penetrating the gate stacking structure and electrically connected to the cell region; a separation structure penetrating the gate stacking structure and extending from the cell region to the extension region; and a penetration plug penetrating the gate stacking structure and the extension region, wherein the penetration plug includes: a first plug portion penetrating the gate stacking structure; and a second plug portion on the first plug portion, wherein the separation structure includes: a first separation portion penetrating the gate stacking structure; and a second separation portion on the first separation portion, and wherein a top surface of the first plug portion and a top surface of the first separation portion are at a substantially same level.