Semiconductor/Solid-State Device Details TRIZ Cases
- Semiconductor Interconnect Buffer Layer for Dielectric Crack Mitigation
A buffer layer at via and vent-hole dielectric corners adds compressive stress to counter thermal mismatch cracking in MEMS-CMOS interconnects.
- Micro/Nanostructure Pad Connections for Stress-Tolerant Chip Packages
Flexible micro- and nanostructure pad connections absorb thermal and mechanical stress to keep compact electronic packages electrically reliable.
- Bendable Wiring Substrate Structure for Stress-Balanced Reliability
Different insulation moduli at inner and outer bend positions absorb and spread stress, improving wiring substrate bending reliability.
- Connector Housing Shield Structure for Leakage EM Wave Attenuation
Arrayed ground conductors between the connector and housing break the wave path, suppressing leakage EM radiation and easing assembly.
- Metal Interconnect Sidewall Spacers for Low-RC Chip Wiring
Sidewall spacers let air-gap interconnects cut capacitance and RC delay while preserving mechanical strength in dense semiconductor wiring.
- Pre-Molded Semiconductor Package Shielding With Exposed Edge Leads
A pre-molded substrate with exposed edge leads lets a conductive cover add EMI shielding while keeping semiconductor packages compact and reliable.
- Chip-on-Film Driving Chip Layout for Tight Display Bonding Space
Multiple driving chips on one COF use staggered or layered pin layouts to fit high-resolution display bonding space limits.
- Stacked Image Sensor Via Coupling for Stable Signal and Power Lines
Conductive vias and films link wiring across three stacked image sensor substrates, improving signal transmission and power supply stability.
- Semiconductor Package Corner Recess Structure for Warpage Uniformity
Corner recesses filled by molding protrusions redistribute thermal stress in a semiconductor package to minimize center-edge warpage.
- Semiconductor Storage Structure for Multi-Depth Via Formation
Support structures at controlled density enable multi-depth via etching while preventing conductive-layer shorts and lowering process count.
- 3D Via-Layer Interconnects for Low-Resistance Signal Paths
Via-layer conductive structures expand signal-path cross-section across metal layers to cut IR drop and improve IC signal speed.
- Source/Drain Isolation Structure for Reduced MD Segment Use
An isolation structure separates part of the active area from an MD segment, preserving connectivity while reducing IC layout area and metal use.
- Semiconductor Package Resin Recess for Creepage and Heat Dissipation
A recessed sealing resin extends creepage distance between bent terminals while an exposed die pad improves heat dissipation in surface mounting.
- 3D IC Semiconductor Package Using PCB to Replace Backside RDL
Replacing the backside redistribution layer with a PCB cuts fine patterning steps, lowers packaging cost, and improves warpage resistance.
- Stacked SerDes Chiplets for High-Speed IC Area and Power Limits
Stacking SerDes chiplets on a main die with TSV links frees functional area and cuts XSR-related power in high-speed ICs.
- Tri-Layer Interlayer Dielectric for Contact Bridge Prevention
A tri-layer ILD uses distinct dielectric materials to improve etch selectivity, prevent metal bridges, and widen the TDDB window.
- 3DIC Core Ball Interconnect Structure for Simpler Die Stacking
Core balls replace high-aspect-ratio metal posts in 3DIC die stacking, cutting process steps, turnaround time, and yield loss.
- 3D IC Semiconductor Package Structure for Higher Yield POP Integration
Stacked dies with TSVs are embedded into a POP package to raise yield, cut molding material use, and improve package rigidity.
- Stacked Semiconductor Via Structure for Heat Dissipation and Low Noise
Protruding metal layers dissipate heat from stacked vias, while an insulating layer separates paths to cut signal noise.
- Semiconductor Interconnect Structure With Selective Tungsten Filling
An auxiliary layer speeds tungsten growth at contact openings, preventing premature closure and improving interconnect conductivity and fill quality.
- Plate-Via Inductor Structure With Magnetic Layer for Compact Packages
Magnetic material around via interconnects boosts inductance and quality factor while keeping integrated inductors compact and low resistance.
- Cavity Wiring Substrate for Thin Embedded Component Interconnects
Anisotropic conductive connections link embedded component electrodes to exposed pads, cutting substrate thickness and assembly complexity.
- Redundant DRAM Data Interfaces for High-Capacity Memory Channels
Redundant DRAM interfaces, multiplexers, and delay elements let more components share a memory channel without degrading signaling speed or integrity.
- Power Module Packaging Layout for Lower Parasitic Capacitance
Separating jumping-potential devices onto insulated substrates cuts parasitic capacitance, common-mode current, and EMI in power modules.
- Vertical Conductive Rail Layout for Dense 3D IC Interconnects
A recessed vertical conductive rail links stacked source/drain contacts while cutting cell area and parasitic capacitance to preserve IC speed.
- Stacked Power Structure for Low-Parasitic High-Frequency Packaging
A dual-substrate layout stacks driver and power chips to cut parasitic parameters and raise integration for high-frequency, high-power use.
- Display Alignment Wiring Layout to Reduce LED Voltage Drop
Separate alignment wirings create local electric fields for LED placement, reducing voltage drop and improving color-area alignment stability.
- Photovoltaic Encapsulation Material for Low-Viscosity Fiber Impregnation
Epoxy-polyester powder coating lowers curing demand and viscosity, improving fiber impregnation, flexibility, and weathering stability in PV modules.
- Electronic Package Module With Porous Liquid Metal Thermal Interface
A porous carrying member retains liquid metal between the chip and heat sink to stop overflow, avoid short circuits, and sustain heat transfer.
- High-Electron-Mobility Component Layout for Lower On-State Resistance
An oblique split between current-collecting regions cuts conductor area and on-state resistance in high-electron-mobility components.
- Resin-Molded Power Semiconductor Package for Creepage Insulation
A skirted dual-resin package increases creepage distance between the lead frame and heatsink to improve insulation without sacrificing heat dissipation.
- Power Module Wire Cooling With Graphite Thermal Sheet
A graphite thermal sheet contacts bonded wires to spread heat into adjacent wires and circuit patterns, limiting wire temperature rise and bond damage.
- Passivation and Planarization Layer Anchoring Against Delamination
A polymer planarization layer extends into passivation openings to anchor the interface, reduce delamination, and support reliable UBM interconnects.
- 3D Memory Source Layer Structure to Prevent Arcing
Segmented source layers and a preformed groove stabilize 3D memory fabrication by controlling charge distribution, lowering resistance, and preventing arcing.
- 2D Interconnect Capping Layers for Electromigration Reliability
Stacked 2D capping layers cut interconnect resistivity and electromigration while preserving adhesion and structural integrity in scaled chips.
- Porous Shroud for Sintered Powder Heat Sink Particle Containment
A porous enclosure contains shed sintered powder in immersion-cooled heat sinks while letting liquid and vapor pass to protect nearby electronics.
- Stacked Conductive Plug Structure for Plug Alignment and Gap Reduction
Stacked conductive plugs with a silicide-covered upper plug section enlarge landing area and reduce misalignment and gap formation.
- Bit Line Boundary Structure for Buried Contact Reliability
A stepped boundary separation film and buffer layer improve bit line contact area and reduce buried contact resistance in dense semiconductor layouts.
- Interposer-Substrate Guide Pattern for Thin Package Alignment
Guide portions around a capacitor help align the interposer and substrate, preventing misalignment in thin multi-chip packages.
- Shielded SiP Package Structure for Thin Low-Warpage Integration
Separated encapsulants and compartment plus global shielding cut SiP thickness, warpage, and die interference while preserving layout flexibility.
- Integrated Semiconductor Heater for Radiation Damage Annealing
An embedded heater anneals radiation-induced oxide traps during operation, improving semiconductor reliability and limiting long-term ionizing damage.
- Hydrogen Gas Sensor Cavity Layout for Precise Differential Readout
An integrated cavity and buried-conductor layout improves hydrogen sensing precision while reducing cross-sensitivity and fabrication complexity.
- Semiconductor Package Interposer Structure for Thin Fine-Pitch I/O
An interposer with conductive pillars enables thinner semiconductor packaging while preventing die delamination and preserving signal transmission.
- Profiled Solder Preform for Pressure-Free Die Attach
Textured solder preforms create venting channels for pressure-free diffusion die attach, improving outgassing, wetting, and joint durability.
- Liquid Metal TIM Barrier Sealing Against Shorts and Degradation
A dual-barrier seal confines liquid metal TIM around high-power chips to block shorts, moisture exposure, and thermal performance loss.
- Redistribution Barrier Stack for Semiconductor Package Adhesion
A TiN-Ti barrier stack blocks oxide formation between copper and polymer layers, strengthening adhesion and reducing delamination in semiconductor packages.
- Noble Metal Plating Surface for Resin Adhesion Under Heat
Lumpy protrusions on a noble metal plating layer anchor sealing resin, reducing peeling from thermal expansion stress in semiconductor packages.
- CoWoS Package Layout With Dummy Dies for Corner Delamination
Dummy dies placed at CoWoS package corners improve underfill adhesion and structural stability, reducing delamination during temperature cycling.
- Thermally Conductive Resin Sheet for Reflow-Stable Insulation
A high-melting thermoplastic resin with boron nitride agglomerates improves heat dissipation, insulation, and reflow tolerance.