Redistribution Barrier Stack for Semiconductor Package Adhesion
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Solution Overview
Problem
The formation of an oxide layer, such as TiOx, between copper and polymer layers in semiconductor packages weakens the interfacial adhesion strength, leading to potential delamination issues.
Innovation Solution
Incorporating a titanium nitride (TiN) layer beneath the titanium (Ti) layer as an interface between copper and polymer layers to prevent oxide formation, using TiN and Ti barrier layers with varying thicknesses in redistribution patterns to enhance adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a titanium (Ti) layer is used as an interface layer between copper (Cu) and polymer layers, then electrical conductivity and adhesion are improved, but gases outgassed from the polymer layer cause oxide layer (TiOx) formation which weakens interfacial adhesion strength
Solution Approach 1:
The single titanium layer is segmented into a multi-layer barrier structure consisting of titanium nitride (TiN) layer and titanium (Ti) layer. This segmentation allows each layer to perform specific functions: TiN layer prevents oxide formation while Ti layer provides adhesion and conductivity, thereby resolving the contradiction between maintaining adhesion strength and preventing oxide formation.
Solution Approach 2:
The titanium nitride (TiN) layer acts as an intermediary between the copper (Cu) layer and the titanium (Ti) layer. It serves as a protective barrier that prevents oxygen from reaching the Ti layer, thereby preventing oxide formation while allowing the Ti layer to maintain its adhesion and conductivity functions. This intermediary layer resolves the contradiction by mediating between the conflicting requirements.
2Strength
If barrier layers are added to prevent oxide formation, then adhesion strength is improved, but device complexity increases
Solution Approach 1:
The invention changes the material parameters and layer thickness parameters of the barrier structure. By optimizing the thickness of TiN layer (first barrier layer) and Ti layer (second barrier layer), the structure achieves effective oxide prevention and adhesion enhancement while controlling the overall complexity. The parameter optimization allows the multi-layer structure to function effectively without excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure effectively mitigates interfacial delamination, improving the robust attachment of redistribution patterns to insulating layers and maintaining the integrity of the semiconductor package.
Implementation Method 1
a first barrier layer and a second barrier layer, wherein the first barrier layer comprises titanium nitride (TiN), the second barrier layer includes titanium (Ti)... to prevent oxide formation
Data Source
AI summary
A semiconductor package, comprising a redistribution substrate including an insulating layer and a first redistribution pattern; and a semiconductor chip electrically connected to the redistribution substrate, wherein the first redistribution pattern comprises a first barrier layer; a second barrier layer on the first barrier layer; and a via structure on the second barrier layer, wherein the first barrier layer comprises a first conductive material and the second barrier layer comprises a second conductive material different from the first conductive material.