Shielded SiP Package Structure for Thin Low-Warpage Integration
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Solution Overview
Problem
Conventional system-in-package (SiP) structures face limitations in design flexibility due to thick substrate layers and lack of compartment shielding, leading to increased thickness and warpage, as well as inefficient use of insulating encapsulants.
Innovation Solution
A package structure is developed with a redistribution structure featuring alternately stacked dielectric and conductive layers, compartment shielding between semiconductor dies, and a global shielding structure, allowing for flexible design and reduced warpage through selective encapsulation and shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If thick substrate layers are used in conventional SiP structures, then structural support is provided, but package thickness increases and warpage occurs
Solution Approach 1:
The substrate is segmented into multiple thin layers (first substrate layer, second substrate layer, intermediate layer) rather than using a single thick substrate. This segmentation maintains structural support while reducing overall package thickness and minimizing warpage, as each thin layer is more flexible and easier to control.
Solution Approach 2:
The patent uses composite material structure with different layers (first substrate layer, second substrate layer, intermediate layer) having different properties. This composite approach allows optimization of each layer for specific functions while achieving overall structural support with reduced thickness.
2Ease of manufacture
If conventional SiP structures without compartment shielding are used, then manufacturing is simpler, but interference between dies occurs and design flexibility is limited
Solution Approach 1:
The package structure is segmented into separate compartments (first compartment, second compartment) that physically isolate different semiconductor dies. This segmentation prevents interference between dies while allowing independent design and optimization of each die, thereby enhancing design flexibility without significantly complicating manufacturing.
3Reliability
If insulating encapsulants are used to encapsulate dies, then protection is provided, but encapsulant volume increases and warpage is exacerbated
Solution Approach 1:
The encapsulant is segmented into separate insulating encapsulants (first insulating encapsulant, second insulating encapsulant) that individually encapsulate specific dies rather than using a single large encapsulant. This reduces the total volume of encapsulant material required while maintaining protection for each die, and also helps reduce warpage by distributing stress more evenly.
4Ease of manufacture
If conventional SiP structures without compartment shielding are used, then manufacturing is simpler, but electromagnetic interference between dies increases
Solution Approach 1:
The package is divided into separate compartments with compartment shielding structures that physically and electromagnetically isolate different semiconductor dies. This segmentation effectively blocks electromagnetic interference between dies while maintaining manufacturing simplicity through a systematic fabrication process.
Solution Approach 2:
Compartment shielding structures serve as intermediary elements between adjacent dies, blocking electromagnetic fields and preventing interference. These shielding structures act as mediators that allow close packing of dies for compact design while maintaining electromagnetic isolation.
Data Source
AI summary
A package structure includes a redistribution structure, a first semiconductor die, a first passive component, a second semiconductor die, a first insulating encapsulant, a second insulating encapsulant, a second passive component and a global shielding structure. The redistribution structure includes dielectric layers and conductive layers alternately stacked. The first semiconductor die, the first passive component and the second semiconductor die are disposed on a first surface of the redistribution structure. The first insulating encapsulant is encapsulating the first semiconductor die and the first passive component. The second insulating encapsulant is encapsulating the second semiconductor die, wherein the second insulating encapsulant is separated from the first insulating encapsulant. The second passive component is disposed on a second surface of the redistribution structure. The global shielding structure is surrounding the first insulating encapsulant, the second insulating encapsulant, and covering sidewalls of the redistribution structure.


