Semiconductor Package Interposer Structure for Thin Fine-Pitch I/O

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Solution Overview

Problem

The challenge in semiconductor device packaging is to achieve a thin profile while preventing cracks and delamination between the die and mounting compound, which is essential for fine pitch I/O connections without compromising the structural integrity and signal transmission.

Innovation Solution

The implementation of an intermediate structure comprising an interposer and conductive pillars, which provides a thickness replacement and ensures electrical connectivity, while also using non-reflowable materials to maintain the structural integrity and prevent delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of stationary object

If the mounting side of the semiconductor package is thinned to reduce package thickness, then the package profile is reduced, but cracks or delamination occur between the die and mounting compound

Engineering Contradiction:
Improvepackage thicknessVSAvoidstructural integrity
Core Design Contradiction:
Length of stationary objectVSReliability

Solution Approach 1:

An intermediate structure comprising an interposer and conductive pillars is introduced between the die and the mounting compound. The interposer serves as a mediator that distributes mechanical stress and prevents direct contact between the die and mounting compound, thereby preventing delamination while enabling package thinning. The conductive pillars provide electrical connectivity through the intermediate structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If the mounting side is thinned to achieve fine pitch I/O, then I/O density is improved, but structural integrity and signal transmission are compromised

Engineering Contradiction:
ImproveI/O pitchVSAvoidsignal transmission
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The intermediate structure with conductive pillars acts as an intermediary transmission path for signals. The conductive pillars maintain signal integrity by providing dedicated electrical pathways that are not affected by the thinned mounting side, thereby enabling fine pitch I/O while preserving signal transmission quality.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The intermediate structure introduces a vertical dimension to the I/O architecture by using conductive pillars that extend through the package thickness. This allows fine pitch I/O connections to be achieved in the horizontal plane while maintaining structural integrity through the vertical dimension, effectively decoupling the two requirements.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Length of stationary object

If multiple layers of interposers are used to maintain thickness, then structural integrity is preserved, but signal continuity is disrupted

Engineering Contradiction:
Improvepackage thicknessVSAvoidsignal continuity
Core Design Contradiction:
Length of stationary objectVSReliability

Solution Approach 1:

A single interposer with conductive pillars serves as an effective intermediary that maintains both thickness and signal continuity. The conductive pillars provide direct vertical electrical pathways through the interposer, avoiding the need for multiple stacked interposers that would create horizontal signal paths and potential discontinuities.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20240249988A1Semiconductor device package and method of manufacturing the same
Publication Date: 2024.07.25 ADVANCED SEMICON ENG INC
  • US20240249988A1 patent drawing
  • US20240249988A1 patent drawing
  • US20240249988A1 patent drawing

AI summary

A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a substrate, an electronic component, an intermediate structure and a protective layer. The electronic component is disposed over the substrate. The intermediate structure is disposed over the substrate and comprises an interposer and a conductive element on the interposer. The protective layer is disposed over the substrate and has an upper surface covering the electronic component and being substantially level with an upper surface of the conductive element.