3D Memory Structure Recess Isolation for Peripheral Circuit Protection

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Solution Overview

Problem

Conventional 3D memory structures face challenges in maintaining the electrical characteristics of peripheral circuits due to high-temperature processes used in forming memory components, leading to decreased product yield and increased costs.

Innovation Solution

A method where a recess is formed on a substrate, and the 3D memory component is fabricated within this recess before forming the peripheral circuit on the substrate outside the recess, thereby isolating the memory component's high-temperature processes from affecting the peripheral circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the peripheral circuit is formed on the substrate prior to the formation of the memory component, then the memory component can be formed with high-temperature processes, but the electrical characteristic of the devices in the peripheral circuit is adversely affected

Engineering Contradiction:
Improvememory component formationVSAvoidelectrical characteristic of peripheral circuit
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The substrate is divided into two distinct regions: a first region for forming the memory component and a second region for forming the peripheral circuit. This spatial segmentation allows different process conditions (high-temperature for memory, low-temperature for peripheral circuit) to be applied independently to each region, resolving the contradiction between manufacturing precision requirements and electrical characteristic preservation.

Inventive Principle:
Principle #1Segmentation

2Productivity

If the peripheral circuit is formed on the substrate prior to the formation of the memory component, then the memory component can be formed, but the product yield decreases

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidproduct yield
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

By segmenting the substrate into separate regions for memory component and peripheral circuit formation, the patent enables independent process optimization. The peripheral circuit region can be processed at lower temperatures that preserve device characteristics, while the memory region undergoes necessary high-temperature processes, thereby maintaining both manufacturing efficiency and product yield.

Inventive Principle:
Principle #1Segmentation

3Ease of manufacture

If the peripheral circuit is formed on the substrate prior to the formation of the memory component, then the manufacturing process can proceed, but the production costs increase

Engineering Contradiction:
Improveprocess sequenceVSAvoidproduction cost
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies spatial segmentation of the substrate into distinct processing regions, which allows each region to undergo appropriately optimized processes. This reduces rework and defect rates, thereby lowering production costs despite the added complexity of region-specific process control.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10943916B2Method for manufacturing three-dimensional memory structure
Publication Date: 2021.03.09 YANGTZE MEMORY TECH CO LTD
  • US10943916B2 patent drawing
  • US10943916B2 patent drawing
  • US10943916B2 patent drawing

AI summary

A method for manufacturing a three-dimensional (3D) memory structure and a 3D memory structure are disclosed. A recess is formed on a substrate, a 3D memory component is formed with a bottom in the recess, and then, a peripheral circuit is formed on the substrate outside the recess.