3D Memory Staircase Contacts With Vertical Support Alignment
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Solution Overview
Problem
The challenge in 3D memory device manufacturing lies in the difficulty of controlling the word line replacement process and the limited size shrinkage due to stringent landing window requirements and space constraints between dummy channel and contact structures, which contradict each other.
Innovation Solution
The solution involves forming support structures that vertically align with contact structures and extend through the 3D memory device, improving manufacturing process strength and increasing the contact landing space window by forming contact and support structures through opposite sides of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If support structures are added to improve manufacturing strength, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The device is divided into separate functional components: contact structures extending through the insulating structure to contact conductive layers, and support structures extending through the stack to contact the contact structures. This segmentation allows each component to perform its specific function independently, improving manufacturing control while maintaining manageable complexity through modular design.
Solution Approach 2:
The support structures act as intermediary elements between the contact structures and the underlying layers. They provide mechanical support and alignment during the word line replacement process, facilitating precise manufacturing without requiring direct complex interactions between other device components.
2Manufacturing precision
If contact landing space is increased, then manufacturing precision is improved, but area of the device increases
Solution Approach 1:
The solution transitions from a planar layout to a three-dimensional architecture. Contact structures extend vertically through the insulating structure to contact conductive layers at different heights, and support structures provide vertical alignment. This vertical dimensionality allows for adequate contact landing space without increasing the horizontal device footprint, as the additional space is utilized in the vertical direction.
Data Source
AI summary
A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes a plurality of conductive layers and a plurality of dielectric layers stacked alternatingly, and the stack includes a staircase structure. The plurality of contact structures each extends through the insulating structure and in contact with a respective conductive layer of the plurality of conductive layers in the staircase structure. The plurality of support structures extends through the stack in the staircase structure. Each support structure is in contact with one of the plurality of contact structures.