3D Memory Stack Support Structure Against Thermal Tilting
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Solution Overview
Problem
The integration limits of two-dimensional nonvolatile memory elements have been reached, necessitating the development of three-dimensional structures, which face challenges in maintaining structural stability and reliability due to heat-induced expansion and tilting of support structures during manufacturing processes.
Innovation Solution
A semiconductor device with a stack structure featuring alternating interlayer insulating and gate conductive layers, including channel plugs and support structures of varying types, along with an auxiliary support structure to stabilize the stack, is manufactured by etching and filling specific patterns to form stable vertical structures and trenches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional stack structure is adopted to improve integration density, then storage capacity is improved, but structural stability deteriorates due to heat-induced expansion and tilting of support structures
Solution Approach 1:
The support structure is divided into multiple segments: a first support structure (insulating layer) and a second support structure (conductive layer) that are alternately stacked. This segmentation allows each layer to perform its specific function - the insulating layer provides electrical isolation while the conductive layer provides mechanical support and heat dissipation, collectively maintaining structural stability in the three-dimensional stack configuration
Solution Approach 2:
The support structure employs a composite design combining insulating material (first support structure) and conductive material (second support structure) in an alternating stack. This composite structure leverages the complementary properties of both materials - the insulating material prevents electrical interference while the conductive material provides thermal management and mechanical strength, resolving the stability issue in 3D integration
2Reliability
If manufacturing processes involve heat treatment, then material properties are improved, but support structures experience expansion and tilting reducing precision
Solution Approach 1:
The patent utilizes the thermal expansion parameters of different materials to advantage. The alternating insulating and conductive layers have different thermal expansion coefficients, and during heat treatment, this differential expansion is controlled to prevent tilting. The conductive layers act as thermal anchors that stabilize the overall structure during thermal processing, maintaining manufacturing precision while still allowing necessary heat treatment for material property improvement
Data Source
AI summary
The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers that are alternately stacked, a channel plug at least partially passing through the stack structure on a cell region, and a plurality of support structures at least partially passing through the stack structure on a contact region.