3D Memory Array Layout for Uniform Storage Layer Deposition
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Solution Overview
Problem
Forming uniform thickness of storage material in three-dimensional memory arrays is challenging with standard techniques, leading to non-uniform electrical properties and reduced memory density.
Innovation Solution
The formation of storage material with a uniform thickness is achieved by using standard techniques like physical vapor deposition (PVD) in a horizontal configuration, with alternating stacks of conductive and dielectric materials, allowing for increased density and storage capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If standard techniques are used to form storage material in three-dimensional memory arrays, then the manufacturing process is simple, but the thickness of storage material becomes non-uniform leading to reduced memory density
Solution Approach 1:
The patent transitions from vertical deposition to horizontal deposition geometry, changing the dimensional approach to material formation. By depositing storage material horizontally between alternating conductive and dielectric stacks, the process achieves uniform thickness across the three-dimensional structure, resolving the contradiction between manufacturing precision and memory density
2Reliability
If storage material thickness is non-uniform, then manufacturing is easier, but electrical properties become non-uniform reducing reliability
Solution Approach 1:
The patent changes the geometric parameters of the deposition process by switching from vertical to horizontal configuration. This parameter change ensures uniform thickness of storage material, which directly improves the uniformity of electrical properties across all memory cells while maintaining ease of manufacture through standard PVD techniques
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in three-dimensional memory arrays with more uniform electrical properties and increased memory density, overcoming the limitations of non-uniform thickness in previous arrays.
Implementation Method 1
The formation of storage material with a uniform thickness is achieved by using standard techniques like physical vapor deposition (PVD) in a horizontal configuration
Data Source
AI summary
In an example, a memory array may include a plurality of first dielectric materials and a plurality of stacks, where each respective first dielectric material and each respective stack alternate, and where each respective stack comprises a first conductive material and a storage material. A second conductive material may pass through the plurality of first dielectric materials and the plurality of stacks. Each respective stack may further include a second dielectric material between the first conductive material and the second conductive material.