Solid-State Devices TRIZ Cases

Resonant peak tuning in green and blue emitters reduces wide-angle color shift while preserving light extraction efficiency and lower power use.

Multiple optical paths in an interposer route signals between photonic components at different elevations while reducing package size and alignment burden.

Resonant peak tuning for RGB emitters and microlens extraction reduces wide-angle color shift while improving light extraction efficiency.

Selective self-aligned nitride removal confines gate insulation in TFT backplanes, preventing switching TFT contamination during high-temperature processing.

Two stacked passive-drive substrates use non-overlapping emitters and light refraction to raise pixel density without cutting energization time or luminance.

An organic insulating area in the display region reduces bending stress and blocks crack spread, improving flexible panel stability.

By combining ToF and CMOS pixels in one array, this case enables 3D images with both accurate distance and color information.

A light-absorbing side surface member supports the extended cover, reducing seams and light leakage in modular inorganic LED displays.

An elastic layer under the bonding electrode absorbs flatness variation, enabling precise micro LED bonding and faster mass transfer.

A single-active-area ESD structure uses deep trench isolation to shrink emitter-collector spacing, cut die area, and keep gain at low voltage.

Varying peripheral column heights helps standard cells fit memory columns more efficiently, improving density and routing in semiconductor devices.

Overlapped transfer electrodes and connection lines in separate layers raise aperture ratio and light transmittance for under-display sensors.

Crosswise drive wirings and reflective layers create light-transmittance regions that improve backlight uniformity while cutting thickness and LED count.

Reflective films and an on-chip lens confine transmitted light in a back-illuminated sensor to cut flare and improve image clarity.

An oriented electrode template crystallizes hafnium-based films into ferroelectric layers, improving memory cell retention, cycling, and lower-coercivity operation.

An inorganic insulating film blocks electron injection from the common electrode, preserving charge balance and reducing LCD flicker.

A nested well and body doping structure stabilizes Zener breakdown voltage under repeated stress while reducing side breakdown and hot carrier impact.

A heat-shrink resin connection bonds the substrate, heat dissipation sheet, and cooling unit to improve heat transfer without damaging light emitting elements.

A side-surface photodetector captures direct and reflected scintillation light with minimal delay, improving radiation entry timing accuracy.

Multiple light-emitting units are integrated on one chip with trenches, boosting micro-LED density while easing transfer alignment and reducing defects.

An electrode carrier plate and 3-part lead path move bonding to the panel side and back, enabling narrow tiled seams while avoiding laser film damage.

Transparent oxide and metal data-line patterns raise camera-area transmittance while preserving pixel circuit conductivity and image quality.

Stacked pad electrodes and side connection lines shrink the non-display area while preserving reliable display interconnects and mounting density.

A lateral gap around the germanium well cuts crystal defects and dark current, improving near-infrared image sensor accuracy.

Staggered driver terminals and side-crossing wiring reduce bezel width while limiting bonding deformation in compact display panels.

Optical bodies between LED units refract wide-angle light toward the normal direction, boosting display brightness for AR panels.

A multilayer grid signal line cuts display panel voltage drop while preserving resolution and avoiding higher supply voltage or wider traces.

Nested sealing portions on bonded sensor substrates block water and ion ingress, improving image sensor moisture resistance and reliability.

Corner pillar connections replace through vias in stacked micro LEDs, preserving emitting area, reducing recombination, and limiting current leakage.

Sized through-holes in a light-shielding layer balance RGB chip output and spacing differences to improve Micro-LED display uniformity and contrast.

Etch-back selectively exposes shared connections so one substrate supports multiple circuit layouts, cutting cost and design cycle time.

A PCB reflective layer redirects transmitted infrared light back through the sensor layer, cutting light loss without complex gold coating.

Intermediate-index encapsulation blocks and air gaps help dense LED arrays extract more light while reducing photon trapping and absorption.

By moving fanout wiring into the active area, this TFT substrate cuts bezel space while separate metal wires limit crosstalk and mura.

Conductive adhesive and ITO interconnect stacked RGB emitters to cut mounting steps, preserve luminous area, and simplify micro-LED packaging.

Microlenses with a larger front surface than base improve LED light extraction and collimation by reducing internal reflection and scattering.

A hybrid SOI and bulk silicon substrate integrates RF and digital or analog devices on one wafer, cutting routing overhead and performance loss.

A bank light-blocking structure overlaps the contact hole to absorb and redirect external light, improving visibility and reflective color sense.

An orthosilicate coating on metal oxide nanoparticles reduces surface defects and hole leakage, improving luminance, stability, and lifespan.

A shorter gate over an aluminum oxide film and side spacers forms an intermediate region that limits hydrogen diffusion and stabilizes oxide TFT Vd-Id behavior.

A reflector-guided multilayer film controls light bleed and leakage while delivering uniform illumination with fewer light sources and lower power.

Dual light-shielding members separate adjacent emitters to improve contrast while a higher-conductivity layer carries heat away.

Integrated test wiring verifies whether substrate cutting hits the target boundary, replacing slow microscope checks with electrical detection.

Bridge and electrode patterns create alternate current paths when LEDs are missing, preventing dark spots and keeping sub-pixels lit.

Vertical p- and n-channel MOSFETs on opposite sides of an insulating slab raise BEOL integration density while limiting short-channel effects.

Shielding portions and cavity-filling protrusions even light delivery to photodiodes, narrowing the red-clear sensitivity gap.

Shared body contact regions transfer holes between GGNMOS transistors so all devices trigger and sustain ESD current discharge.

Subtractive backside metal patterning creates wider-bottom, narrower-top lines to fit tight N2P spacing and repair contact misalignment.

Connecting the deep isolation portion through interlayer wiring enables biasing during color filter formation, reducing striation defects.