LED Current-Blocking Pattern Layout for Dicing Short Prevention
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Solution Overview
Problem
Conventional light emitting diodes (LEDs) face issues with current crowding near electrodes, leading to uneven current distribution and potential short-circuiting due to over-etching during the formation of current blocking patterned structures, which affects luminous efficiency and reliability.
Innovation Solution
The design incorporates a light emitting device with a substrate, semiconductor stack, and separated first and second current blocking patterned structures, where the first structure overlaps with an electrode and the second does not, ensuring electrical isolation and preventing short-circuiting by extending across the scribe line during the dicing separation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If current blocking patterned structures are formed in conventional LEDs, then current distribution becomes more even, but over-etching during formation causes short-circuiting and reduces reliability
Solution Approach 1:
The patent applies preliminary action by forming a protective layer on the substrate before etching the current blocking patterned structures. This protective layer prevents over-etching from causing short-circuits between adjacent structures, thereby maintaining manufacturing precision while ensuring reliability. The protective layer is removed after the etching process completes its function.
2Reliability
If current blocking patterned structures are formed to improve current distribution, then luminous efficiency increases, but the complexity of the device structure increases
Solution Approach 1:
The patent applies segmentation by dividing the current blocking function into multiple discrete patterned structures rather than using a continuous blocking layer. These segmented structures are distributed across the device to manage current flow locally, achieving even current distribution and high luminous efficiency while keeping each individual structure simple and the overall fabrication process manageable.
3Reliability
If the first current blocking patterned structure overlaps with the electrode, then electrical isolation is improved, but the risk of short-circuiting increases during manufacturing
Solution Approach 1:
The patent introduces an intermediary protective layer between the electrode and the first current blocking patterned structure during the etching process. This intermediary layer allows the structures to be positioned close to each other for good electrical isolation while preventing direct contact that would cause short-circuits during manufacturing. The protective layer is selectively removed after positioning is achieved.
Data Source
AI summary
A light-emitting diode, includes a substrate; a semiconductor stack formed on the substrate; a first current blocking patterned structure and a second current blocking patterned structure formed on the semiconductor stack and separated from each other; and a plurality of electrodes formed on the semiconductor stack and electrically connected to the semiconductor stack; wherein the first current blocking patterned structure is overlapped with one of the plurality of electrodes and the second current blocking patterned structure is not overlapped with the plurality of electrodes.