Semiconductor Package Transfer Bonding for Uniform Heating
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Solution Overview
Problem
The manufacturing process of semiconductor packages is complex and time-consuming, requiring improved thermal conductivity and package quality to meet increasing demands in electronic device applications.
Innovation Solution
A method involving the transfer of semiconductor components with conductive bumps onto a substrate using a transfer device, followed by heating or pressurizing with a heating device, which simplifies the process, reduces time, and enhances thermal conductivity and package quality through metal-to-metal docking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional semiconductor package manufacturing process is used, then manufacturing precision and reliability are maintained, but manufacturing process complexity and time consumption increase
Solution Approach 1:
The patent combines multiple discrete manufacturing steps (component placement, bonding, heating, and curing) into a single integrated process. The transfer device places multiple semiconductor components onto the substrate simultaneously, and the heating device applies heat and pressure to all components in one operation, eliminating the need for sequential processing of each component individually.
Solution Approach 2:
The heating device serves multiple functions simultaneously: it heats the semiconductor components for thermal processing, applies pressure for bonding, and maintains uniform temperature distribution across the entire substrate. This multi-functional approach replaces multiple specialized devices that would be needed in conventional sequential processes.
2Temperature
If heating is performed on the other side of the substrate opposite to the semiconductor components, then thermal processing is achieved, but temperature uniformity decreases and substrate warping increases
Solution Approach 1:
Instead of heating the substrate from the opposite side (conventional approach), the patent inverts the heating approach by applying heat directly to the side where semiconductor components are located. This inversion allows for more direct and uniform heat transfer to the components while reducing thermal gradients that cause substrate warping.
Solution Approach 2:
The heating device applies heat locally and directly to the semiconductor components and their immediate surrounding areas on the substrate surface. This localized heating approach ensures uniform temperature distribution where it is most needed (at the component-substrate interface) while minimizing thermal stress and warping in other regions of the substrate.
3Productivity
If mass transfer process is implemented on large-size substrates, then manufacturing efficiency improves, but process control difficulty increases
Solution Approach 1:
The transfer device is divided into multiple independent transfer units or modules, each capable of handling and placing semiconductor components individually. This segmentation allows for precise control of each component's position while maintaining the ability to process multiple components simultaneously across the large substrate, thereby preserving positioning precision despite mass transfer operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for mass transfer on large-size substrates, reduces manufacturing time, improves thermal conductivity, and enhances electrical reliability by accelerating temperature increase and uniformity, while minimizing substrate warping.
Implementation Method 1
the plurality of semiconductor components are heated through the heating device, accelerating the temperature increase or improving uniformity of the temperature increase
Implementation Method 2
The heating device heats or pressurizes at least two semiconductor components
Data Source
AI summary
A manufacturing method of a semiconductor package is provided. The manufacturing method includes the following. A plurality of semiconductor components are provided. Each semiconductor component has at least one conductive bump. A substrate is provided. The substrate has a plurality of conductive pads. A transfer device is provided. The transfer device transfers the semiconductor components onto the substrate. A heating device is provided. The heating device heats or pressurizes at least two semiconductor components. During transferring of the semiconductor components to the substrate, the at least one conductive bump of each semiconductor component is docked to a corresponding one of the conductive pads.