Single-Active-Area ESD Layout With Deep Trench Isolation
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Solution Overview
Problem
Existing semiconductor devices with multiple-active-area (MAA) ESD protection devices face challenges due to large separation distances between emitter and collector regions, leading to increased die area, manufacturing costs, and complexity in interconnect design, as well as low gain and operational issues at low voltages.
Innovation Solution
Implementing a single-active-area (SAA) ESD protection device with emitter and collector regions in the same active area, utilizing deep trench isolation structures and a shallow trench isolation region, which reduces the separation distance and allows for a more flexible layout similar to logic transistors, enhancing operational efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple-active-area (MAA) ESD protection devices are used, then ESD protection functionality is provided, but the separation distance between emitter and collector regions increases die area
Solution Approach 1:
The patent merges the emitter and collector regions into a single active area, eliminating the need for separate active areas and the isolation structures between them. This consolidation reduces the overall die area while maintaining the ESD protection functionality through the bipolar transistor operation within the unified active area.
Solution Approach 2:
The patent transitions from a planar layout with separated active areas to a vertical structure where the bipolar transistor is formed within a single active area using deep trench isolation to create the necessary separation between emitter and collector regions in the vertical dimension rather than horizontal separation.
2Reliability
If multiple-active-area (MAA) ESD protection devices are used, then ESD protection is implemented, but manufacturing costs increase
Solution Approach 1:
By combining the emitter and collector into one active area, the patent reduces the number of fabrication steps, particularly eliminating redundant isolation formation processes between separate active areas. This simplification directly reduces manufacturing complexity and associated costs while maintaining ESD protection functionality.
3Reliability
If multiple-active-area (MAA) ESD protection devices are used, then ESD protection is provided, but interconnect design complexity increases
Solution Approach 1:
The consolidation of emitter and collector regions into a single active area significantly simplifies the interconnect architecture by eliminating the need for complex routing around multiple isolated active areas. The interconnect design becomes more straightforward with direct access to the bipolar transistor terminals within the unified active area.
4Reliability
If multiple-active-area (MAA) ESD protection devices are used, then ESD protection is implemented, but gain is reduced and low voltage operation becomes problematic
Solution Approach 1:
By forming the bipolar transistor within a single active area using vertical separation through deep trench isolation, the patent achieves better carrier confinement and higher current gain. The vertical structure improves the transistor's ability to operate at low voltages by enhancing the electric field distribution and reducing parasitic effects associated with lateral separation.
Data Source
AI summary
A semiconductor device includes a substrate. The semiconductor device further includes a doped well in the substrate, wherein the doped well comprises a first concentration of dopants of a first type in the substrate. The semiconductor device further includes a doped region in the substrate, wherein the doped region comprises a second concentration of the dopants of the first type, the doped region extends around the doped well, and the doped region is electrically insulated from the doped well. The semiconductor device further includes an active area, and wherein the active area comprises an emitter region and a collector region, wherein the emitter region is electrically connected to the doped region. The semiconductor device further includes a deep trench isolation (DTI) structure extending through the active area and between the emitter region and the collector region.