Substrate Thinning with Diamond-Like Carbon Stopper Layer

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Solution Overview

Problem

Current methods for thinning semiconductor substrates to create flexible integrated circuit devices face challenges such as limited thinning accuracy, warpage issues, and variations in substrate thickness, which affect element properties and manufacturing yield, especially when aiming for substrates thinner than 50 μm, and are costly due to the expense of silicon substrates.

Innovation Solution

A method involving the formation of a stopper layer with higher hardness than the substrate, typically using diamond-like carbon (DLC), over one surface of the substrate, allowing for thinning or removal through grinding, polishing, or chemical etching, while controlling adhesion to prevent damage to the layer above the stopper and enabling heat treatment without compromising adhesion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If substrate thinning is performed by grinding and polishing to achieve thickness of 50 μm or less, then substrate flexibility is improved, but manufacturing precision deteriorates due to limited accuracy and in-plane uniformity

Engineering Contradiction:
Improvesubstrate flexibilityVSAvoidthinning accuracy and in-plane uniformity
Core Design Contradiction:
Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The substrate thinning process is divided into multiple stages: initial grinding to reduce thickness, followed by selective removal of the stopper layer, and final polishing. This segmentation allows each stage to optimize for its specific function, achieving both flexibility and precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A stopper layer is formed on the substrate surface before thinning operations begin. This preliminary action protects the underlying circuit elements during grinding and polishing, ensuring manufacturing precision while allowing aggressive thinning to achieve the desired flexibility.

Inventive Principle:
Principle #10Preliminary action

2Adaptability or versatility

If substrate thickness is reduced to improve flexibility, then device adaptability is improved, but manufacturing yield deteriorates due to warpage and stress variations

Engineering Contradiction:
Improvedevice flexibilityVSAvoidmanufacturing yield
Core Design Contradiction:
Adaptability or versatilityVSProductivity

Solution Approach 1:

The stopper layer provides localized protection and stress management at the substrate surface, allowing different regions of the substrate to be processed with uniform quality. This local intervention prevents warpage and stress variations that would otherwise reduce manufacturing yield.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The stopper layer acts as an intermediary between the substrate and the thinning process. It mediates the stress and warpage issues that arise during thinning, allowing the substrate to be reduced to flexible thickness while maintaining manufacturing yield.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If conventional polishing methods are used with abrasive grains softer than the substrate, then substrate surface evenness is improved, but manufacturing precision deteriorates because only chemically bonded portions can be polished selectively

Engineering Contradiction:
Improvesurface evennessVSAvoidpolishing selectivity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The invention changes the hardness parameter of the polishing abrasive to be harder than the substrate. This parameter change enables selective polishing of the stopper layer without relying on chemical bonding, improving both surface evenness and manufacturing ease.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the creation of thinner, more flexible integrated circuit devices with improved manufacturing yield and reduced cost, as it allows for precise thinning and removal of substrates, minimizing variations in element properties and enabling heat treatment without adhesion issues.

Implementation Method 1

A method involving the formation of a stopper layer with higher hardness than the substrate, typically using diamond-like carbon (DLC), over one surface of the substrate

Methodology Applied
Scientific EffectHardness: Vickers Hardness Test

Implementation Method 2

typically using diamond-like carbon (DLC), over one surface of the substrate

Methodology Applied
Scientific EffectDiamond-like carbon: Diamond-like Carbon

Implementation Method 3

allowing for thinning or removal through grinding, polishing, or chemical etching

Methodology Applied
Scientific EffectChemical etching: Chemical Bonding

Data Source

PatentUS8492246B2Method of manufacturing integrated circuit device
Publication Date: 2013.07.23 SEMICON ENERGY LAB CO LTD
  • US8492246B2 patent drawing
  • US8492246B2 patent drawing
  • US8492246B2 patent drawing

AI summary

It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.