Monolithic Micro-LED Array Chip for High-Density Transfer

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Solution Overview

Problem

The challenge in manufacturing micro-LED displays lies in efficiently arranging and transferring a large number of micron-level light-emitting units onto a target substrate with high precision, as current methods face issues with alignment accuracy and epitaxy utilization due to the small size and spacing of these units.

Innovation Solution

A monolithic array chip design featuring a first semiconductor layer with multiple light-emitting units separated by trenches, allowing for high-density integration and reduced spacing between units, which improves epitaxy utilization and simplifies the transfer process by eliminating the need for extensive separation lanes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If micro-LEDs are arranged with small spacing to increase density, then the resolution and light-emitting area are improved, but the alignment accuracy and transfer precision deteriorate due to the small size of individual units

Engineering Contradiction:
Improvelight-emitting area densityVSAvoidalignment accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

Multiple light-emitting units are merged into a single monolithic array chip structure, where several micro-LEDs are integrated on one semiconductor layer with shared electrodes and separation lanes, treating them as a unified transfer unit rather than individual components

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The monolithic array chip is segmented into multiple light-emitting units separated by separation lanes, allowing the entire array to be transferred as one unit while maintaining individual unit boundaries for subsequent separation if needed

Inventive Principle:
Principle #1Segmentation

2Ease of manufacture

If traditional separation lanes are used between micro-LEDs, then the transfer process is simplified, but the area occupied by separation lanes increases, reducing the effective light-emitting area

Engineering Contradiction:
Improvetransfer process simplicityVSAvoidseparation lane area
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The width of separation lanes is optimized to minimal necessary dimensions, and the configuration of separation lanes is adjusted to follow the contours of light-emitting units, reducing wasted space while maintaining transferability

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The array structure utilizes two-dimensional arrangement optimization, where separation lanes are positioned strategically to allow complete array transfer while minimizing their area footprint through clever geometric configuration

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Productivity

If micro-LEDs are made smaller to increase display resolution, then the high-density packaging is improved, but the ease of mounting and defect replacement deteriorates

Engineering Contradiction:
Improvepackaging densityVSAvoidmounting ease
Core Design Contradiction:
ProductivityVSEase of operation

Solution Approach 1:

Multiple small micro-LEDs are combined into a single monolithic array chip that can be mounted as one unit, eliminating the need to handle and mount individual micron-level devices while maintaining high density

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The array of micro-LEDs is pre-assembled and tested as a complete unit on the monolithic chip before transfer to the final substrate, allowing defect identification and replacement at the array level rather than individual device level

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20240405054A1Monolithic array chip
Publication Date: 2024.12.05 ENNOSTAR CORP
  • US20240405054A1 patent drawing
  • US20240405054A1 patent drawing
  • US20240405054A1 patent drawing

AI summary

A monolithic array chip comprises a first semiconductor layer; a common electrode located on the first semiconductor layer; a first light-emitting unit with a first electrode located on the first semiconductor layer; a second light-emitting unit with a second electrode located on the first semiconductor layer; a third light-emitting unit with a third electrode located on the first semiconductor layer, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are separated from each other by a trench.