Semiconductor Light Emitting Device ESD Protection Capacitor
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Solution Overview
Problem
Semiconductor light emitting devices face challenges with electro-static discharge (ESD) protection and moisture ingress, which can lead to device failure and reduced reliability.
Innovation Solution
Incorporating a capacitor structure with an insulating layer between the metal layer and the second electrode layer, and a metal layer with a loop pattern, which acts as a built-in capacitor to charge and discharge ESD voltage, while also preventing moisture ingress and improving adhesive forces between semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional structure without capacitor is used, then the device structure is simple, but the ESD protection capability is insufficient
Solution Approach 1:
The patent merges the capacitor structure with the existing electrode and insulating layers of the LED device. The first electrode, first insulating layer, and metal layer with loop pattern are integrated into the device structure to form a capacitor that provides ESD protection without requiring separate external components, thus improving reliability while controlling complexity.
Solution Approach 2:
The first insulating layer acts as an intermediary between the first electrode and the metal layer with loop pattern, enabling the formation of a capacitor structure. This insulating layer mediates the electrical isolation necessary for capacitor operation while allowing the overall structure to provide ESD protection functionality.
2Reliability
If metal layers are directly connected without insulating layers, then the manufacturing process is simpler, but moisture ingress and interlayer shorts occur
Solution Approach 1:
The first insulating layer serves as an intermediary barrier between the first electrode and the metal layer with loop pattern, preventing direct contact that would cause short circuits. This insulating layer also acts as a moisture barrier, protecting the internal electrode structures from moisture ingress while maintaining the necessary electrical connections.
Solution Approach 2:
The first insulating layer functions as a thin film barrier that protects the underlying electrode structures from moisture and environmental degradation. This thin insulating film provides effective protection against moisture ingress while adding minimal structural complexity to the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the robustness of semiconductor light emitting devices against ESD, improves moisture resistance, and increases the reliability and efficiency of the devices by preventing interlayer shorts and enhancing electrical characteristics.
Implementation Method 1
a first insulating layer between the light emitting structure and the second electrode layer; and a metal layer formed under the first insulating layer and electrically connected to the first electrode
Implementation Method 2
a first insulating layer between the light emitting structure and the second electrode layer
Implementation Method 3
improve ESD (electro-static discharge) characteristics by disposing an insulating layer between a metal layer and a second electrode layer to embody a capacitor
Data Source
AI summary
Embodiments relate to a semiconductor light emitting device. The semiconductor light emitting device according to embodiments comprises a light emitting structure comprising a plurality of compound semiconductor layers; a first electrode under the light emitting structure; a second electrode layer on the light emitting structure; a first insulating layer between the light emitting structure and the second electrode layer; and a metal layer formed under the first insulating layer and electrically connected to the first electrode.