Ferroelectric Gate Stack Layout for Capacitance Matching
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Solution Overview
Problem
Conventional metal-ferroelectric-metal-insulator-semiconductor field-effect transistors (MFMISFETs) face limitations in capacitance reduction and voltage drop due to similar dimensions of the MFM and MIS structures, leading to increased manufacturing costs and performance constraints in ferroelectric memory devices.
Innovation Solution
The semiconductor structure incorporates a MFM structure with different dimensions than the MIS structure, allowing for enhanced capacitance matching and reduced voltage drop without increasing the drain terminal voltage, achieved through a spacer layer that adjusts the capacitance of the capacitor, enabling a single photolithography step and cost-effective manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the MFM and MIS structures have similar dimensions, then the manufacturing process is simpler, but the capacitance matching is poor and voltage drop is increased
Solution Approach 1:
The patent applies local quality by giving different dimensional characteristics to different parts of the structure. Specifically, the MFM structure and MIS structure are designed with different dimensions locally to achieve optimal capacitance matching, while maintaining overall manufacturing feasibility through standardized fabrication processes.
Solution Approach 2:
The patent changes the dimensional parameters of the MFM and MIS structures to achieve better capacitance matching. By adjusting the dimensions of these structures differently, the patent optimizes the electrical characteristics and reduces voltage drop while maintaining manufacturability.
2Ease of manufacture
If the MFM and MIS structures have similar dimensions, then the fabrication process is easier, but the voltage drop increases
Solution Approach 1:
The patent implements local quality by creating distinct dimensional characteristics in different regions of the device. The MFM structure and MIS structure are designed with specific dimensional differences that optimize charge distribution and reduce voltage drop, while the overall fabrication process remains manageable through systematic manufacturing approaches.
Solution Approach 2:
The patent modifies the dimensional parameters of the MFM and MIS structures to optimize electrical performance. By changing these parameters differently for each structure, the patent achieves reduced voltage drop and improved energy efficiency while maintaining fabrication feasibility.
3Volume of moving object
If the capacitance of the capacitor is reduced, then the device density increases, but the voltage drop distribution becomes unbalanced
Solution Approach 1:
The patent applies local quality by creating asymmetric dimensional relationships between the MFM and MIS structures. This local differentiation allows the capacitor to achieve reduced capacitance for higher device density while the specific dimensional configuration maintains balanced voltage drop distribution across the device.
Solution Approach 2:
The patent employs asymmetry by designing the MFM and MIS structures with different dimensions. This asymmetric design enables the capacitor to have reduced capacitance for improved device density while the specific asymmetric configuration ensures proper voltage drop distribution, resolving the contradiction between density and electrical balance.
Data Source
AI summary
The present disclosure provides a method for manufacturing a semiconductor structure. The method includes: receiving a substrate; forming a transistor surrounded by a dielectric layer over the substrate, wherein the dielectric layer includes a through hole, and the transistor is formed in the through hole; forming a gate contact in the through hole to electrically connect the transistor; forming a ferroelectric layer over the gate contact in the through hole; forming an insulating layer conformal to and over the dielectric layer and the ferroelectric layer; removing a portion of the insulating layer to form a spacer in the through hole and over the ferroelectric layer; and forming a top electrode over the ferroelectric layer and between the spacer.