Pixel Structure Common Line Shielding for LCD Cross Talk Reduction

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Solution Overview

Problem

In LCD pixel structures, the capacitance between the data line and the pixel electrode leads to cross talk, which reduces the aperture ratio, and existing solutions using thicker insulator layers face issues with moisture absorption and reduced transmittance.

Innovation Solution

A pixel structure is manufactured with a common line formed between the pixel electrode and the data line to reduce capacitance, and a connection layer is used to electrically connect the pixel electrode and the drain, enhancing the aperture ratio and preventing line breaks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If the distance between the data line and the pixel electrode is shortened, then the aperture ratio is improved, but the capacitance between the data line and the pixel electrode is increased causing cross talk

Engineering Contradiction:
Improveaperture ratioVSAvoidcross talk
Core Design Contradiction:
Area of stationary objectVSObject-generated harmful factors

Solution Approach 1:

A common line is introduced as an intermediary conductive layer positioned between the data line and the pixel electrode. This common line acts as a shield that reduces the capacitive coupling (cross talk) between the data line and pixel electrode, allowing them to be positioned closer together without excessive capacitance effects

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-generated harmful factors

If a thicker insulator layer is disposed between the pixel electrode and the data line to reduce capacitance, then the cross talk is reduced, but the organic material absorbs moisture weakening adhesion and cannot be completely bleached reducing transmittance

Engineering Contradiction:
Improvecross talkVSAvoidadhesion
Core Design Contradiction:
Object-generated harmful factorsVSReliability

Solution Approach 1:

Instead of using a thick insulator layer as the primary means to reduce capacitance, the patent introduces a common line as an intermediary conductive structure that provides shielding. This approach reduces reliance on thick organic insulator materials, thereby maintaining adhesion properties and allowing for better optical transmittance

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the approach from modifying insulator layer thickness to modifying the conductive layer configuration. By adjusting the position and structure of the common line relative to the data line and pixel electrode, the capacitance is reduced without requiring thick insulator materials that cause adhesion and transmittance problems

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces cross talk and increases the aperture ratio of the pixel structure while maintaining the integrity of the connection between the pixel electrode and the drain, improving the overall quality and reliability of the LCD panel.

Implementation Method 1

the capacitance (Cpd) between pixel electrode and a data line is one of factors affecting an aperture ratio

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS7951629B2Pixel structure and manufacturing method thereof
Publication Date: 2011.05.31 AU OPTRONICS CORP
  • US7951629B2 patent drawing
  • US7951629B2 patent drawing
  • US7951629B2 patent drawing

AI summary

A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.