Semiconductor Substrate Bonding with Porous Separation Layers
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Solution Overview
Problem
Existing methods for bonding and separating semiconductor substrates often result in inefficient separation processes, leading to yield losses and substrate damage, particularly when attempting to reuse substrates after bonding.
Innovation Solution
A method involving the formation of a porous semiconductor layer with a high concentration of impurity atoms, such as hydrogen, on one substrate and a non-porous layer on the other, allowing for effective mechanical or fluidic separation by applying a physical force, thereby preventing damage and enabling substrate reuse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrates are bonded together to manufacture semiconductor devices, then device integration is achieved, but separation becomes difficult and may cause substrate damage
Solution Approach 1:
The patent introduces a separation layer between bonded substrates that can be selectively removed or activated to enable clean separation. This segmentation allows the bonding interface to be divided into a stable bonded region and a controllable separation region, resolving the contradiction by providing both strong bonding where needed and easy separation where required.
Solution Approach 2:
The patent employs an intermediary substance or layer at the bonding interface that facilitates both bonding and subsequent separation. This intermediary enables the substrates to be strongly bonded during manufacturing while providing a predetermined weak point for controlled separation, thus maintaining substrate integrity throughout the process.
2Ease of operation
If conventional separation methods are used, then substrates can be separated, but yield losses occur due to substrate damage
Solution Approach 1:
The patent prepares the bonding interface in advance by forming a separation layer or introducing impurity atoms during the bonding process. This preliminary action creates a predetermined separation path that enables easy separation without damage, thereby maintaining high yield while improving ease of operation.
Solution Approach 2:
The patent changes the physical or chemical parameters of the bonding interface by introducing impurity atoms (such as hydrogen) or forming porous layers. These parameter changes create a region with different mechanical or chemical properties that facilitates clean separation while preserving substrate integrity, thus improving both ease of operation and yield.
3Productivity
If substrates are reused after bonding, then manufacturing efficiency improves, but separation difficulty increases
Solution Approach 1:
The patent applies local quality by creating a separation layer or impurity-rich region only at specific locations (such as peripheral regions or designated separation lines) rather than throughout the entire substrate. This localized modification enables simple separation operations while maintaining the integrity and functionality of the main device areas, thus improving substrate reuse efficiency without increasing overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient separation of substrates while minimizing damage, allowing for the reuse of substrates and improving the yield of semiconductor devices by preventing the formation of separation faces in critical areas like the stacked film, thus enhancing the manufacturing efficiency.
Implementation Method 1
forming a porous semiconductor layer with a high concentration of impurity atoms
Implementation Method 2
allowing for effective mechanical or fluidic separation by applying a physical force
Implementation Method 3
forming a porous layer in a first portion of the first film and a non-porous layer in a second portion of the first film
Data Source
AI summary
In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a first substrate, forming a porous layer in a first portion of the first film and a non-porous layer in a second portion of the first film, forming a second film including a first device on the first film, forming a third film including a second device on a second substrate, and bonding the second film on the first substrate and the third film on the second substrate to be opposite to each other. Furthermore, the semiconductor device includes a first region and a second region. Moreover, the first device and the second device are located in the first region, the first portion is located among the first region and the second region, and the second portion is located in the second region.