Sapphire Substrate Laser Singulation for Accurate Hexagonal Cutting

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Solution Overview

Problem

Conventional laser processing methods struggle to accurately singulate sapphire substrates into hexagonal shapes for light emitting elements, leading to difficulties in shape accuracy and manufacturing yield due to crack extension and corner division issues.

Innovation Solution

A method involving the use of pulsed lasers with varying intensities to create first and second modified regions along predetermined dividing lines in a tessellation pattern, guiding and controlling crack extension to prevent overgrowth and accurate division of hexagonal shapes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a conventional laser processing method is used to singulate a sapphire substrate into hexagonal shapes, then the substrate can be divided along predetermined dividing lines, but high accuracy in shape and position cannot be achieved due to crack extension and corner division issues

Engineering Contradiction:
Improveshape accuracyVSAvoidmanufacturing yield
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent divides the laser processing into two separate stages: first creating initial modified regions along dividing lines, then creating second modified regions at corner portions with different laser parameters. This segmentation of the processing steps allows each stage to be optimized independently, preventing crack extension while maintaining shape accuracy.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different laser irradiation parameters (power, pulse duration, scanning speed) to different regions of the substrate. The first modified regions along the dividing lines use one set of parameters, while the second modified regions at corner portions use different parameters. This local quality approach ensures that each region receives the appropriate processing intensity to prevent defects.

Inventive Principle:
Principle #3Local quality

2Ease of manufacture

If laser light is irradiated along predetermined dividing lines to create modified regions, then the substrate can be cut, but crack extension occurs that prevents accurate hexagonal shape formation

Engineering Contradiction:
Improvecutting processVSAvoidhexagonal shape accuracy
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent first creates modified regions along the entire dividing lines, then subsequently creates second modified regions at the corner portions. This preliminary action of pre-processing the dividing lines before addressing corner portions allows cracks to be contained within the first modified regions, preventing extension into the hexagonal shapes.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

By creating second modified regions at corner portions with specific laser parameters before final cutting, the patent prevents crack extension from occurring. The second modified regions act as a barrier that counteracts the natural tendency of cracks to propagate along the dividing lines.

Inventive Principle:
Principle #9Preliminary anti-action

3Device complexity

If a single laser irradiation intensity is used to create modified regions along dividing lines, then the process is simple, but accurate corner division and shape control cannot be achieved

Engineering Contradiction:
Improveprocessing stepsVSAvoidcorner division accuracy
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent changes laser parameters (irradiation intensity, pulse duration, scanning speed) between different processing stages and regions. The first laser irradiation uses a set of parameters optimized for creating modified regions along dividing lines, while the second laser irradiation uses different parameters optimized for creating modified regions at corner portions. This parameter change enables precise corner division.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent dynamically adjusts laser processing parameters based on the specific region being processed. The system transitions from processing linear dividing lines to processing corner portions, with each stage having optimized parameters. This dynamic approach allows the processing conditions to adapt to the geometric requirements of different regions.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables high-accuracy singulation of sapphire substrates into hexagonal shapes, reducing manufacturing defects and improving yield by controlling crack propagation and corner division, thereby enhancing the precision and reliability of light emitting element production.

Implementation Method 1

scanning and irradiating a laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines

Methodology Applied
Scientific EffectLaser irradiation: Laser

Implementation Method 2

create a plurality of first modified regions along the predetermined dividing lines

Methodology Applied
Scientific EffectLaser ablation: Laser Ablation

Data Source

PatentUS11769852B2Method of cutting a substrate along dividing lines
Publication Date: 2023.09.26 NICHIA CORP
  • US11769852B2 patent drawing
  • US11769852B2 patent drawing
  • US11769852B2 patent drawing

AI summary

A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.