Programmable RRAM Interposer Structure to Avoid Plasma Damage

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Solution Overview

Problem

Existing interposers with resistive switching layers face localized plasma damage during reactive-ion etching, limiting their effectiveness in patterning processes.

Innovation Solution

The interposer features a vertically disposed resistive film layer within a dielectric layer, with metal interconnects and redistribution lines connected to the resistive film at specific points, allowing for selective electrical signal transmission and reducing damage from patterning processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If reactive-ion etching (RIE) is used during the patterning process to fabricate resistive switching layers in TSVs, then switching or rerouting capabilities are provided, but localized plasma damage occurs to the resistive switching layer

Engineering Contradiction:

Improveswitching capabilityVSAvoidplasma damage

Core Design Contradiction:

Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The patent extracts the harmful RIE process from the fabrication sequence by forming the resistive switching layer after TSV formation rather than before, eliminating plasma damage while preserving switching capability through the alternative deposition approach

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent performs preliminary actions by forming the TSV structure with metal lining first, then subsequently depositing the resistive switching layer material in the remaining space, avoiding plasma exposure to the switching layer while establishing the complete functional structure

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables the interposer to function as a programmable, vertically disposed RRAM, providing selective electrical signal transmission and minimizing damage from patterning processes, thus enhancing the reliability and functionality of the interposer.

Implementation Method 1

the fabrication of the resistive switching layer in the TSV may be lead to localized plasma damage to the resistive switching layer

Methodology Applied

Scientific EffectResistive switching: Electrical Resistance

Implementation Method 2

a metal interconnect disposed in the resistive layer lined via

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20230301214A1Programmable interposer using RRAM platform

Publication Date: 2023.09.21 GLOBALFOUNDRIES SINGAPORE PTE LTD

AI summary

According to various embodiments, there may be provided an interposer. The interposer including: a substrate; a dielectric layer disposed on the substrate; a via disposed entirely within the dielectric layer; a resistive film layer disposed to line the via; a metal interconnect disposed in the resistive layer lined via; and a plurality of metal lines disposed in the dielectric layer, the plurality of metal lines including a first metal line connected to the metal interconnect, a second metal line connected to the resistive film layer at a first point, and a third metal line connected to the resistive film layer at a second point.