Copper Array Substrate Coating for Oxidation-Resistant Routing

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Solution Overview

Problem

Copper, commonly used in semiconductor routing wires, is susceptible to oxidation, leading to unstable properties and reduced product reliability due to its susceptibility to oxidization.

Innovation Solution

An array substrate is designed with a conductive copper layer protected by an oxidization protective layer made of tungsten, which may also include nickel or other metals with similar lattice constants, ensuring effective adhesion and preventing copper oxidation, thereby enhancing the stability and reliability of the conductive layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If copper is used as the conductive layer material, then electrical resistivity is reduced, but oxidization resistance deteriorates

Engineering Contradiction:
Improveelectrical resistivityVSAvoidoxidization resistance
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent applies composite materials by combining copper conductive layer with multiple protective layers (tungsten oxidization protective layer, nickel intermediate layer, and copper barrier layer). This composite structure allows the copper to provide low electrical resistivity while the protective layers collectively provide oxidization resistance, resolving the contradiction between electrical performance and oxidation resistance.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent uses an intermediary approach by introducing a nickel intermediate layer between the copper conductive layer and the tungsten oxidization protective layer. This intermediate layer acts as a mediator that prevents direct contact between copper and oxygen, while also providing good adhesion between the copper and tungsten layers, thus protecting copper from oxidization without compromising electrical conductivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If an oxidization protective layer is added on copper, then oxidization resistance is improved, but adhesion deteriorates

Engineering Contradiction:
Improveoxidization resistanceVSAvoidadhesion
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The nickel intermediate layer serves as an intermediary that solves the adhesion problem. It has good affinity with both copper and tungsten, creating strong bonding interfaces. The nickel layer prevents direct contact between copper and tungsten, avoiding poor adhesion issues, while still providing effective oxidization protection to the copper layer.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The multi-layer composite structure (copper-nickel-tungsten-copper) is designed to optimize both adhesion and oxidization resistance. Each layer is selected for its specific properties: copper for conductivity, nickel for adhesion and intermediate protection, and tungsten for primary oxidization barrier. This composite approach ensures strong inter-layer adhesion while providing comprehensive oxidization protection.

Inventive Principle:
Principle #40Composite materials

3Reliability

If tungsten is used as the oxidization protective layer material, then oxidization resistance is improved, but thermal diffusivity mismatch increases

Engineering Contradiction:
Improveoxidization resistanceVSAvoidthermal diffusivity mismatch
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The nickel intermediate layer acts as a thermal buffer that mitigates the thermal diffusivity mismatch between copper and tungsten. It provides a gradual transition in thermal properties, reducing thermal stress and preventing delamination during temperature cycling, thus improving the overall thermal stability of the composite structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent optimizes the thickness parameters of each layer to control thermal diffusivity effects. By carefully selecting the thickness of the nickel intermediate layer and the tungsten protective layer, the thermal stress caused by diffusivity mismatch is minimized, maintaining structural stability under thermal conditions while preserving oxidization protection.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of a tungsten-based oxidization protective layer improves the adhesion and stability of the copper conductive layer, preventing oxidation and enhancing the reliability of the array substrate and display apparatus by ensuring uniform film formation and high thermal diffusivity.

Implementation Method 1

Copper, as a metal material with low electrical resistivity, has already been main routing wire metal in the semiconductor industry, but due to its property of being susceptible to oxidization, it will lead to instable properties of a product and reduce reliability of the product.

Methodology Applied
Scientific EffectOxidation resistance: Oxidation

Implementation Method 2

the oxidization protective layer improves the conductive stability and adhesion of copper, preventing oxidization and enhancing the reliability of copper-based components in semiconductor products

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS20240186330A1Array substrate and display apparatus
Publication Date: 2024.06.06 BOE TECHNOLOGY GROUP CO LTD
  • US20240186330A1 patent drawing
  • US20240186330A1 patent drawing
  • US20240186330A1 patent drawing

AI summary

Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer, where a material of the oxidization protective layer includes tungsten.