3D Non-Volatile Memory Device Vertical Plug Wiring
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Solution Overview
Problem
The increasing number of wirings between the memory cell array and the drive circuit in three-dimensional non-volatile memory devices complicates the layout and structure, making it challenging to enhance memory capacity while maintaining a compact design.
Innovation Solution
The implementation of a three-dimensional non-volatile memory device with a first wiring, a memory cell array, a select element, a second wiring, and plugs that electrically connect the control electrode and the inter-gate connection, allowing for a simplified manufacturing process and reduced device size by avoiding interference between wirings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of wirings connecting the memory cell array and the drive circuit is increased to enhance memory capacity, then the memory capacity is improved, but the layout and structure of wirings become more complex and the device size increases
Solution Approach 1:
The patent transitions from planar wiring connections to three-dimensional vertical connections using plugs that extend through insulating films. This dimensional change allows multiple wiring connections without increasing lateral layout complexity, as connections are established in the vertical dimension rather than requiring extended horizontal wiring paths.
Solution Approach 2:
The patent implements nested structures where plugs are embedded within insulating films, and control electrodes are positioned between wirings and memory cell arrays. This nesting allows multiple functional elements to occupy overlapping spatial regions, reducing overall device footprint while maintaining high connectivity.
2Quantity of substance
If the number of wirings connecting the memory cell array and the drive circuit is increased to enhance memory capacity, then the memory capacity is improved, but the device size increases
Solution Approach 1:
By utilizing vertical plugs extending through insulating films rather than horizontal wiring extensions, the patent achieves increased connectivity without proportional increases in lateral device area. The vertical dimension provides additional connection pathways that do not consume lateral space.
Solution Approach 2:
The patent employs thin insulating films as flexible structural elements that can be penetrated by plugs. These thin films provide electrical isolation while minimizing vertical space consumption, allowing dense integration of vertical connections without significantly increasing device thickness.
3Ease of manufacture
If traditional wiring layouts are used in three-dimensional non-volatile memory devices, then the manufacturing process becomes complicated due to wiring interference, but avoiding wiring interference requires complex layout adjustments
Solution Approach 1:
The patent segments the wiring structure into distinct horizontal wirings and vertical plugs, with insulating films separating different functional regions. This segmentation allows independent optimization of each component and simplifies manufacturing by enabling separate formation steps for wirings, plugs, and insulating layers without requiring complex coordinated patterning.
Solution Approach 2:
The patent introduces insulating films as intermediary layers between wirings and memory cell arrays, and between different wiring layers. These intermediary films provide electrical isolation and structural support, allowing wirings to be positioned closer together without interference while maintaining manufacturing simplicity through standard deposition and etching processes.
Data Source
AI summary
According to an embodiment, a non-volatile memory device includes a first wiring provided on an underlayer, a first memory cell array provided on the first wiring and including a plurality of memory cells, a first select element including a first control electrode provided between the first wiring and the first memory cell array. The device also includes a second wiring provided at the same level as the first wiring and electrically connected to the first control electrode, and a first plug electrically connecting the first control electrode and the second wiring, one end of the first plug being in contact with the second wiring, and a side surface of the first plug being in contact with the first control electrode.