3D MRAM Cell Stacking With Demagnetized Spacer Portions

The patent transitions from planar two-dimensional arrangement to three-dimensional vertical stacking of memory cells. Multiple electrode layers and insulating layers are stacked alternately in the thickness direction, enabling magnetoresistance effect elements to be arranged in three dimensions rather than just on a flat substrate, thereby significantly increasing integration density.

The patent implements a nested structure where multiple electrode layers and insulating layers are contained within each other in a stacked configuration. Each electrode layer is surrounded by insulating layers, and multiple such units are nested vertically to form a compact three-dimensional memory cell structure that maximizes space utilization.

The patent divides the memory structure into discrete repeating units, each consisting of an electrode layer and surrounding insulating layers. This segmentation into standardized modules simplifies the manufacturing process by allowing repeated deposition cycles with consistent parameters, thereby managing the complexity of multiple layers through modular construction.

The patent applies different material properties and thicknesses to specific layers based on their functional requirements. Insulating layers have optimized thickness and material composition to provide adequate electrical isolation while maintaining compact dimensions. This local optimization of layer properties ensures that each layer performs its function efficiently, reducing the cumulative precision burden across the entire stack.