Magnetic-Field-Controlled Resistors TRIZ Cases
- MTJ Pillar Formation Using Two-Step Etching for MRAM Reliability
A two-step MTJ etch with spacer-defined openings removes residues while limiting NBLOK loss and sidewall damage in MRAM fabrication.
- Spin-Orbit Torque Memory Structure for Reconfigurable PUF Security
A triple-layer spin-orbit torque memory uses random lower-layer magnetization to deliver reconfigurable, stable PUF security.
- 3D MRAM Cell Stacking With Demagnetized Spacer Portions
Vertical stacking of magnetoresistance cells with demagnetized non-element portions raises integration density while supporting 3D memory layout.
- Dual-Layer MTJ Top Contact for Short-Resistant Low-Height MRAM
A dual-layer MTJ top contact uses a wider lower contact and narrower upper contact to prevent shorts while reducing MRAM cell height.
- Oxide Seed Layer Structure for Thermally Stable Perpendicular MTJs
An oxide-CoFeB-Cr seed stack improves perpendicular MTJ thermal stability in STT-MRAM while keeping switching currents low.
- Neuromorphic Magnetic Element Stacking for High-Density Integration
Hierarchical stacking of magnetoresistive magnetic elements with switching elements overcomes shape mismatch and enables denser neuromorphic integration.
- Octagon MTJ Stack Geometry to Prevent MRAM ILD Voids
Tapered MTJ layers and segmented ILD filling suppress voids between MRAM pillars, reducing top-contact shorts and improving scalability.