Magnetic Element Sidewall Protection via Segmented Etching

The etching process is divided into two distinct steps: first physical etching with noble gas to create initial openings and protect sidewalls through re-deposition, then chemical etching with halogen gas to complete the etching. This segmentation allows each step to optimize for its specific function, reducing overall chemical damage while maintaining etching efficiency.

Physical etching with noble gas is performed before chemical etching to pre-create openings and form protective sidewall structures. This preliminary action reduces the subsequent chemical etching time and protects magnetic layers from prolonged chemical exposure, thereby improving reliability while maintaining productivity.

The etching process is segmented into physical etching first to create openings and sidewall protection, followed by chemical etching to complete the removal. This ensures complete etching through the two-step process while minimizing chemical damage by limiting the duration of chemical gas exposure.

Noble gas serves as an intermediary in the physical etching step, creating the initial structure and protective sidewalls without causing chemical damage. This intermediary action enables subsequent chemical etching to be faster and more controlled, reducing overall chemical exposure while ensuring completeness.

The etching process is segmented into physical etching with noble gas followed by chemical etching with halogen gas. Although this adds a step, the physical etching creates efficient sidewall protection that enables faster subsequent chemical etching, and the combined process time is optimized to balance protection with overall efficiency.

The physical etching with noble gas continuously deposits material on sidewalls during the etching process, providing ongoing protection. This continuous protective action prevents chemical damage during the subsequent chemical etching step, maintaining reliability without requiring excessive process time.