Magnetic Memory Device With Protrusions For Spin-Orbit Torque

Solution Overview

Problem

Magnetic memory devices face challenges in achieving stable operations due to limitations in controlling the magnetization of ferromagnetic layers, leading to inefficiencies in data storage and retrieval.

Innovation Solution

A magnetic memory device design incorporating a conductive layer with specific regions, including protrusions and recesses, that facilitate the orientation of magnetization by applying currents in a manner that enhances the spin-orbit torque effect, allowing for efficient control of magnetization states.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional magnetic memory device structures are used, then device simplicity is maintained, but operation stability deteriorates due to limitations in controlling magnetization of ferromagnetic layers

Engineering Contradiction:

Improveoperation stabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The conductive layer is divided into multiple regions (first region, second region, and third region with protrusions) to create localized current paths. This segmentation allows different regions to perform specific functions: the first and second regions provide current flow paths, while the third region with protrusions generates spin-orbit torque for magnetization switching, thereby improving operation stability through functional differentiation.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Protrusions are added only in the third region of the conductive layer, creating localized structural features with specific properties. These protrusions concentrate current density and enhance spin-orbit torque effects at specific locations, enabling effective magnetization control without requiring complex structures throughout the entire device.

Inventive Principle:

Principle #3Local quality

2Productivity

If conventional current application methods are used, then device simplicity is maintained, but magnetization control efficiency deteriorates

Engineering Contradiction:

Improvemagnetization control efficiencyVSAvoidcurrent path complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The conductive layer is divided into multiple regions (first region, second region, and third region with protrusions) to create localized current paths. This segmentation allows different regions to perform specific functions: the first and second regions provide current flow paths, while the third region with protrusions generates spin-orbit torque for magnetization switching, thereby improving operation stability through functional differentiation.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Protrusions are added only in the third region of the conductive layer, creating localized structural features with specific properties. These protrusions concentrate current density and enhance spin-orbit torque effects at specific locations, enabling effective magnetization control without requiring complex structures throughout the entire device.

Inventive Principle:

Principle #3Local quality

3Use of energy by moving object

If magnetization control is not optimized, then device simplicity is maintained, but energy consumption increases due to inefficient spin-orbit torque utilization

Engineering Contradiction:

Improveenergy consumptionVSAvoiddata storage efficiency

Core Design Contradiction:

Use of energy by moving objectVSProductivity

Solution Approach 1:

Protrusions are added only in the third region of the conductive layer, creating localized structural features with specific properties. These protrusions concentrate current density and enhance spin-orbit torque effects at specific locations, enabling effective magnetization control without requiring complex structures throughout the entire device.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The invention changes the physical parameters of the conductive layer by adding protrusions with specific dimensions (width Wr, length Lr, and position Pr). These parameter changes optimize current distribution and spin-orbit torque generation, enabling efficient magnetization switching at lower energy consumption while improving data storage efficiency.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enables more stable and high-speed operations with reduced energy consumption by effectively controlling the magnetization of the ferromagnetic layers, improving data storage reliability and efficiency.

Implementation Method 1

facilitate the orientation of magnetization by applying currents in a manner that enhances the spin-orbit torque effect

Methodology Applied

Scientific EffectSpin-orbit torque:

Data Source

PatentUS10529399B2Magnetic memory device

Publication Date: 2020.01.07 KK TOSHIBA

AI summary

According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.