Neuromorphic Magnetic Element Stacking for High-Density Integration
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Solution Overview
Problem
Magnetoresistive effect elements of the three-terminal type often have shapes that do not coincide with the shapes of switching elements, making it difficult to integrate them with high density due to differences in occupied areas, which hinders the degree of integration in integrated devices.
Innovation Solution
The integration of magnetoresistive effect elements and switching elements is achieved by forming magnetic elements in different hierarchical layers with specific arrangements of conductive layers, switching elements, and wiring configurations, allowing for efficient electrical connection and alignment within the laminated structural body.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If magnetoresistive effect elements of three-terminal type are integrated with switching elements, then the functionality of the integrated device is improved, but the degree of integration is reduced due to shape mismatch and area occupation differences
Solution Approach 1:
The patent introduces a hierarchical layer structure with multiple levels (first hierarchical layer, second hierarchical layer, third hierarchical layer) to accommodate magnetoresistive effect elements and switching elements. This vertical dimensionality allows elements with different shapes to be integrated without occupying the same planar space, thereby resolving the shape mismatch problem while maintaining high integration density.
Solution Approach 2:
The patent embeds magnetoresistive effect elements within the hierarchical layer structure formed by switching elements and wiring. Specifically, magnetic elements are positioned in spaces between switching elements or in higher hierarchical layers, effectively nesting functional components within the structural framework. This nesting approach maximizes space utilization and achieves high integration density.
2Adaptability or versatility
If magnetoresistive effect elements are integrated in a conventional manner, then the device functionality is achieved, but the area occupation is excessive due to shape mismatch with switching elements
Solution Approach 1:
By transitioning from a two-dimensional planar integration to a three-dimensional hierarchical layer structure, the patent allows magnetoresistive effect elements to be positioned in vertical spaces above or below switching elements. This dimensional change enables the device to maintain full functionality while dramatically reducing the planar area occupation, as elements no longer need to align horizontally.
Solution Approach 2:
The patent divides the integrated device into distinct hierarchical layers, with switching elements in one layer and magnetoresistive effect elements in another layer or at different vertical positions. This segmentation separates the spatial requirements of different component types, allowing each to be optimized for its specific shape and function without being constrained by the other's geometry, thereby reducing overall area occupation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables a high degree of integration of magnetoresistive effect elements and switching elements, allowing for the full utilization of switching elements and improved integration density, while also enabling the formation of neuromorphic devices capable of performing neural network operations.
Implementation Method 1
Magnetoresistive effect elements using changes in a resistance value (changes in magnetoresistance) based on changes in a relative angle of magnetization of two ferromagnetic layers are known.
Data Source
AI summary
An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.